Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit

ABSTRACT

A thin-film transistor, a thin-film transistor sheet, an electric circuit, and a manufacturing method thereof are disclosed, the method comprising the steps of forming a semiconductor layer by providing a semiconductive material on a substrate, b) forming an insulating area, which is electrode material-repellent, by providing an electrode material-repellent material on the substrate, and c) forming a source electrode on one end of the insulating area and a drain electrode on the other end of the insulating area, by providing an electrode material.

CROSS-REFERENCE TO RELATED APPLICATION

The present application is a divisional application of U.S. patentapplication Ser. No. 10/740,644, filed on Dec. 19, 2003, the entirecontents of which are incorporated herein by reference. The Ser. No.10/742,644 application claimed the benefit of the date of the earlierfiled Japanese Patent Application No. JP 2002-376792 filed Dec. 26,2002, and priority to JP 2003-079239 filed Mar. 24, 2003, and priorityto JP 2003-081960 filed Mar. 25, 2003 and priority to all of theapplications is also claimed in the present divisional application.

FIELD OF THE INVENTION

The present invention relates to a method of a thin-film transistor, athin-film transistor sheet, and an electric circuit.

BACKGROUND OF THE INVENTION

With the spread of information terminals, there are increasing demandsfor a flat panel display that serves as a display for a computer.Further, with development of the information technology, there has beenincreased a chance for information offered in a form of a sheet of papermedium in the past to be offered in an electronic form. An electronicpaper or a digital paper is demanded increasingly as a display mediumfor a mobile that is thin, lightweight and handy.

In the case of a display device of a flat sheet type, a display mediumis generally formed using an element that employs a liquid crystal,organic EL or electrophoresis method. In the display medium of thiskind, a technology for using an active driving element comprised of athin-film transistor (TFT), serving as an image driving element, is themain current for ensuring uniform image brightness and an imagerewriting speed.

The TFT is manufactured by a process comprising forming, on a glasssubstrate, a semiconductor layer of a-Si (amorphous silicone) or p-Si(poly-silicone) and metal films of source, drain and gate electrodes, inthe order. In the manufacture of a flat panel display employing such aTFT, a photolithography step with high precision is required in additionto a thin layer forming step requiring a vacuum line carrying out a CVDmethod or a sputtering method or a high temperature treatment step,which results in great increase of manufacturing cost or running cost.Recent demand for a large-sized display panel further increases thosecosts described above.

In order to overcome the above-described defects, an organic thin-filmtransistor employing an organic semiconducting material has beenextensively studied (see, for example, Japanese Patent O.P.I.Publication No. 10-190001 and “Advanced Material”, 2002, No. 2, p. 99(review)). Since the organic thin-film transistor can be manufactured atlow temperature employing a lightweight substrate difficult to bebroken, a flexible display employing a resin film as a substrate can berealized (see, for example, SID '02 Digest P. 57). Further, employing anorganic semiconducting material allowing a wet process such as aprinting method or a coating method, a display manufacturing process canbe realized which provides excellent productivity and reduced cost.

A method is proposed (see, for example, WO 01/47043) in which anelectrode in an organic thin-film transistor is formed employing an inkjet method, but this method employs a polyimide film formed according tophotolithography at the organic semiconductor channel area between thesource and drain electrodes.

These methods have problem in that the channel accuracy are poor,resulting in fluctuation of its performance of the resulting thin-filmtransistor. Further, as the methods described above have problem in thatas SD electrodes are formed employing a liquid material, the electrodesare likely to be short-circuited which may make it impossible tomanufacture a thin-film transistor.

SUMMARY OF THE INVENTION

The present invention has been made in view of the above. An object ofthe invention is to provide a method of easily and efficientlymanufacturing a thin-film transistor, a thin-film transistor sheet andan electric circuit, each having high accuracy, without employing avacuum system process requiring a large scale manufacturing facility.Another object of the invention is to provide a method of stablymanufacturing a thin-film transistor a thin-film transistor sheet and anelectric circuit, minimizing fluctuation of their performance.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1( a), 1(b), and 1(c) each shows a structural example of a bottomgate type thin-film transistor.

FIG. 1( d) shows a structural example of a top gate type thin-filmtransistor.

FIG. 2 shows an equivalent circuit diagram of one embodiment of athin-film transistor sheet, in which plural thin-film transistors arearranged.

FIG. 3(1), FIG. 3(2), FIG. 3(3), FIG. 3(4), FIG. 3(5), and FIG. 3(6)show one embodiment of the method of the invention of manufacturing athin-film transistor.

FIG. 4 is an illustration in which an insulating area is formed on thechannel of a thin-film transistor.

FIG. 5( a) is an illustration in which an electrode material is ejectedonto an insulating area according to an ink jet method as ink droplet.

FIG. 5( b) is an illustration in which an electrode material isseparated into two by an insulating area to form an electrode on eachside of the insulating area.

FIG. 6( a) is an illustration in which an electrode material is ejectedon each side of an insulating area according to an ink jet method as inkdroplet.

FIG. 6( b) is an illustration in which an electrode is formed on eachside of an insulating area.

FIG. 7(1), FIG. 7(2), FIG. 7(3), FIG. 7(4), FIG. 7(5), FIG. 7(6), andFIG. 7(7) show another embodiment of the method of the invention ofmanufacturing a thin-film transistor.

FIG. 8(1), FIG. 8(2), FIG. 8(3), FIG. 8(4), FIG. 8(5), FIG. 8(6), FIG.8(7), and FIG. 8(8) show further another embodiment of the method of theinvention of manufacturing a thin-film transistor.

FIGS. 9( a), 9(b), and 9(c) each shows a structure example of an organicthin-film transistor constituting one pixel of a thin-film transistorsheet.

FIG. 10 shows one embodiment of the method of the invention ofmanufacturing a thin-film transistor sheet according to an ink jetmethod.

FIG. 11 shows a schematic view of one embodiment in which an insulatingarea is linearly formed in a thin-film transistor sheet.

FIG. 12 shows a schematic view of another embodiment in which aninsulating area is linearly formed in a thin-film transistor sheet.

FIG. 13 shows a schematic view of further another embodiment in which aninsulating area is linearly formed in a thin-film transistor sheet.

FIG. 14 shows a schematic view of still further another embodiment inwhich an insulating area is linearly formed in a thin-film transistorsheet.

FIGS. 15(1), 15(2), and 15(3) show one embodiment of the method of theinvention of manufacturing an electric circuit.

FIGS. 16(1), 16(2), 16(3), 16(4) and 16(5) show another embodiment ofthe method of the invention of manufacturing an electric circuit.

FIGS. 17(1), 17(2), 17(3), 17(4), 17(5), 17(6), 17(7), and 17(8) showanother embodiment of the method of the invention of manufacturing athin-film transistor.

FIG. 18 is an illustration showing a structural example of a thin-filmtransistor.

DETAILED DESCRIPTION OF THE INVENTION

The above object of the invention can be attained by the followingconstitution:

1. A method of manufacturing a thin-film transistor comprising asubstrate, and provided thereon, a gate electrode, a gate insulatinglayer, a semiconductor layer, a source electrode and a drain electrode,the method comprising the steps of:

a) forming the semiconductor layer by providing a semiconductivematerial on the substrate;

b) forming an insulating area, which is electrode material-repellent, byproviding an electrode material-repellent material on the substrate; and

c) forming a source electrode on one end of the insulating area and adrain electrode on the other end of the insulating area, by providing anelectrode material.

2. The method of item 1 above, wherein the insulating area is comprisedof a silicone rubber layer.

3. The method of item 1 above, wherein the thickness of the insulatingarea is from 0.05 to 10 μm.

4. The method of item 1 above, wherein the providing of the electrodematerial-repellent material is carried out by an ink jet method.

5. The method of item 1 above, further comprising the step of forming anink receptive layer on the substrate before the formation of theinsulating area, wherein the insulating area is formed in the inkreceptive layer on the substrate.

6. The method of item 1 above, wherein the providing of thesemiconductive material is carried out by an ink jet method.

7. The method of item 1 above, wherein the providing of the electrodematerial is carried out by an ink jet method.

8. The method of item 7 above, wherein the electrode material iscontained in a solvent or a dispersion medium containing 50% by weightof water.

9. The method of item 1 above, wherein formation of the insulating areais carried out by providing a light sensitive layer on the substrate,providing an electrode material-repellent insulating layer on the lightsensitive layer, exposing the resulting material and developing theexposed material.

10. The method of item 9 above, wherein the exposing is carried outemploying laser.

11. The method of item 9 above, wherein the light sensitive layer is anablation layer.

12. The method of item 1 above, wherein after the semiconductor layerhas been formed, the insulating area is formed on the resultingsemiconductor layer.

13. The method of item 1 above, wherein after the semiconductor layerhas been formed, an ink receptive layer is provided on the resultingsemiconductor layer, and then the insulating area is formed in the inkreceptive layer on the semiconductor layer.

14. The method of item 1 above, wherein after the semiconductor layerhas been formed, an intermediate layer is provided on the semiconductorlayer so as to protect the resulting semiconductor layer, and then theinsulating area is formed on the intermediate layer.

15. The method of item 1 above, wherein the semiconductor layer is anorganic semiconductor layer containing an organic semiconductivematerial.

16. The method of item 1 above, wherein the substrate is a resin sheetcomprised of a resin.

17. A method of manufacturing a thin-film transistor sheet comprising agate busline, a drain busline, and a thin-film transistor comprising asubstrate and provided thereon, a gate electrode, a gate insulatinglayer, a semiconductor layer, a source electrode and a drain electrode,the plural thin-film transistors being connected with each other throughthe gate busline and the source busline, the method comprising the stepsof:

a) forming the semiconductor layer by providing a semiconductivematerial on the substrate;

b) forming an insulating area, which is electrode material-repellent, byproviding an electrode material-repellent material on the substrate; and

c) forming a source electrode on one end of the insulating area and adrain electrode on the other end of the insulating area by providing anelectrode material.

18. The method of item 17 above, wherein the insulating area iscomprised of a silicone rubber layer.

19. The method of item 17 above, wherein the thickness of the insulatingarea is from 0.05 to 10 μm.

20. The method of item 17 above, wherein the providing of the electrodematerial-repellent material is carried out by an ink jet method.

21. The method of item 17 above, further comprising the step of formingan ink receptive layer on the substrate before the formation of theinsulating area, wherein the insulating area is formed in the inkreceptive layer on the substrate.

22. The method of item 17 above, wherein the providing of thesemiconductive material is carried out by an ink jet method.

23. The method of item 17 above, wherein the providing of the electrodematerial is carried out by an ink jet method.

24. The method of item 23 above, wherein the electrode material iscontained in a solvent or a dispersion medium containing 50% by weightof water.

25. The method of item 17 above, wherein formation of the insulatingarea is carried out by providing a light sensitive layer on thesubstrate, providing an electrode material-repellent insulating layer onthe light sensitive layer, exposing the resulting material anddeveloping the exposed material.

26. The method of item 25 above, wherein the exposing is carried outemploying laser.

27. The method of item 25 above, wherein the light sensitive layer is anablation layer.

28. The method of item 17 above, wherein after the semiconductor layerhas been formed, the insulating area is formed on the resultingsemiconductor layer.

29. The method of item 17 above, wherein after the semiconductor layerhas been formed, an ink receptive layer is provided on the resultingsemiconductor layer, and then the insulating area is formed in the inkreceptive layer on the semiconductor layer.

30. The method of item 17 above, wherein after the semiconductor layerhas been formed, an intermediate layer is provided on the semiconductorlayer so as to protect the resulting semiconductor layer, and then theinsulating area is formed on the intermediate layer.

31. The method of item 17 above, wherein the semiconductor layer is anorganic semiconductor layer containing an organic semiconductivematerial.

32. The method of item 17 above, wherein the substrate is a resin sheetcomprised of a resin.

33. The method of item 17 above, wherein the semiconductor layer isformed so as to cross the gate busline.

34. The method of item 17 above, wherein the source electrode forms apixel electrode or the source electrode is connected to a pixelelectrode, wherein the pixel electrode is separated by the insulatingarea from the drain electrode which is connected to the source busline.

35. The method of item 17 above, wherein the substrate is transportedduring manufacture.

36. The method of item 17 above, wherein the substrate is transported inthe direction crossing the gate busline to linearly form the insulatingarea.

37. A method of manufacturing an electric circuit comprising asubstrate, and provided thereon, an electrode, the method comprising thesteps of:

a) forming an insulating area, which is electrode material-repellent, byproviding an electrode material-repellent material on the substrate; and

b) forming an electrode by providing an electrode material on thesubstrate.

38. The method of item 37 above, wherein the insulating area iscomprised of a silicone rubber layer.

39. The method of item 37 above, wherein the thickness of the insulatingarea is from 0.05 to 100 μm.

40. The method of item 37 above, wherein the providing of the electrodematerial-repellent material is carried out by an ink jet method.

41. The method of item 37 above, wherein the formation of the insulatingarea is carried out by providing an ink receptive layer on thesubstrate, and providing an electrode material-repellent material in theink receptive layer.

42. The method of item 37 above, wherein the providing of the electrodematerial is carried out by an ink jet method.

43. The method of item 37 above, wherein the formation of the insulatingarea is carried out by providing a light sensitive layer on thesubstrate, providing an electrode material-repellent insulating layer onthe light sensitive layer, exposing the resulting material anddeveloping the exposed material.

44. The method of item 43 above, wherein the exposing is carried outemploying laser.

45. The method of item 43 above, wherein the light sensitive layer is anablation layer.

46. The method of item 37 above, wherein the substrate is a resin sheetcomprised of a resin.

47. A thin-film transistor comprising a substrate, and provided thereon,a source electrode and a drain electrode each being comprised of anelectrode material, an insulating area, which is electrodematerial-repellent, and a semiconductor layer, wherein each of thesource electrode and the drain electrode is connected to thesemiconductor layer and wherein the drain electrode is separated fromthe source electrode by the insulating area.

48. The thin-film transistor of item 47 above, wherein the insulatingarea is comprised of a silicone rubber layer.

49. The thin-film transistor of item 47 above, wherein the thickness ofthe insulating area is from 0.05 to 10 μm.

50. The thin-film transistor of item 47 above, further comprising alight sensitive layer.

51. A thin-film transistor comprising a substrate, and provided thereon,a gate electrode, a gate insulating layer, a semiconductor layer, and aninsulating area, which is electrode material-repellent, in that order,wherein the thin-film transistor further comprises a drain electrode anda source electrode in which the drain electrode is separated from thesource electrode by the insulating area.

52. The thin-film transistor of item 51 above, further comprising alight sensitive layer.

53. A thin-film transistor comprising two or more of the organicthin-film transistor of item 47 above.

54. A thin-film transistor sheet comprising two or more of the organicthin-film transistor of item 51 above.

55. A thin-film transistor sheet comprising an insulating area, which iselectrode-repellent, a source busline, plural drain electrodes comprisedof an electrode material, and plural source electrodes comprised of anelectrode material, the source busline being connected to the pluraldrain electrodes, and each of the plural drain electrodes beingconnected to a respective pixel electrode, wherein the respective pixelelectrode is separated from the source busline by the insulating area.

1-1. A thin-film transistor comprising a substrate, and providedthereon, a gate electrode, a semiconductor layer, a source electrode anda drain electrode, which is manufactured by the method comprising thesteps of forming an insulating area, which is electrodematerial-repellent, and providing an electrode material on theinsulating area side to form a source electrode on one end of theinsulating area and a drain electrode on the other end of the insulatingarea.

1-2. The thin-film transistor of item 1-1 above, wherein the insulatingarea is comprised of a silicone rubber layer.

1-3. The thin-film transistor of item 1-1 or 1-2 above, wherein areceptive layer is provided on the substrate, and then an electrodematerial repellent material is supplied on the receptive layer to formthe insulating area.

1-4. The thin-film transistor of any one of items 1-1 through 1-3 above,wherein an electrode material is supplied on the receptive layer to formthe source electrode and the drain electrode.

1-5. The thin-film transistor of any one of items 1-1 through 1-4 above,wherein the insulating layer is formed on the semiconductor layer.

1-6. The thin-film transistor of any one of items 1-1 through 1-5 above,wherein an intermediate layer is provided between the semiconductorlayer and the insulating area.

1-7. The thin-film transistor of any one of items 1-1 through 1-6 above,wherein the semiconductor layer contains an organic semiconductivematerial.

1-8. A method of manufacturing the thin-film transistor of any one ofitems 1-1 through 1-7 above, wherein the insulating area is formedemploying an ink jet method.

1-9. A method of manufacturing the thin-film transistor of any one ofitems 1-1 through 1-7 above, wherein the source electrode and the drainelectrode are formed employing an ink jet method.

1-10. A method of manufacturing the thin-film transistor of any one ofitems 1-1 through 1-7 above, wherein the insulating area, the sourceelectrode and the drain electrode are formed employing an ink jetmethod.

1-11. The method of item 1-9 or 1-10 above, wherein a solvent or adispersion medium of the ink used for formation of the insulating thesource electrode and the drain electrode contains 50% by weight ofwater.

2-1. A method of manufacturing an electric circuit, the methodcomprising the steps of forming a light sensitive layer on a substrate,forming an electrode material-repellent insulating layer on the lightsensitive layer, exposing the resulting material and developing theexposed material to form an electrode material-repellent area, andproviding an electrode material on the electrode material-repellent areaside to form an electrode.

2-2. The method of claim 2-1, wherein the exposure is carried outemploying laser.

2-3. The method of claim 2-1 or 2-2, wherein the light sensitive layeris an ablation layer.

2-4. An electric circuit manufactured by the method of any one of items2-1 through 2-3.

2-5. A method of manufacturing an organic thin-film transistor, themethod comprising the steps of forming a gate electrode on a substrate,forming a gate insulating layer on the substrate, forming an organicsemiconductor layer on the substrate, and forming a source electrode anda drain electrode on the substrate, wherein the formation of the sourceelectrode and the drain electrode comprise the steps of forming a lightsensitive layer, forming an electrode material-repellent insulatinglayer on the light sensitive layer, exposing the resulting material anddeveloping the exposed material to form an electrode material-repellentarea, and providing an electrode material on the electrodematerial-repellent area side.

2-6. The method of claim 2-5, wherein the exposure is carried outemploying laser.

2-7. The method of claim 2-5 or 2-6, wherein the light sensitive layeris an ablation layer.

2-8. An organic thin-film transistor manufactured by the method of anyone of items 2-5 through 2-7.

2-9. An organic thin-film transistor sheet comprising two or more of theorganic thin-film transistor of item 2-8.

3-1. A method of manufacturing a thin-film transistor sheet comprising agate busline, a drain busline, and a thin-film transistor comprising asubstrate and provided thereon, a gate electrode, a gate insulatinglayer, a channel comprised of a semiconductor layer, a source electrodeand a drain electrode, the plural thin-film transistors being connectedwith each other through the gate busline and the source busline, themethod comprising the steps of forming an electrode material-repellentarea, directly or through another layer, on the substrate or on thechannel, and forming the source electrode and the drain electrode byproviding an electrode material directly or through another layer, onthe substrate or on the channel.

3-2. The method of item 3-1, wherein the channel crosses the gatebusline.

3-3. The method of item 3-1 or 3-2, wherein the substrate is comprisedof a resin plate.

3-4. The method of any one of items 3-1 through 3-3 above, wherein theelectrode material is provided onto the electrode material-repellentarea, the electrode material being separated by the electrodematerial-repellent area to form a source electrode on one end of theelectrode material-repellent area and a drain electrode on the other endof the electrode material-repellent area.

3-5. The method of any one of items 3-1 through 3-4 above, wherein thesource electrode forms a pixel electrode or is connected to a pixelelectrode, and the pixel electrode is separated by the electrodematerial-repellent area from the drain electrode which is connected tothe source busline.

3-6. The method of any one of items 3-1 through 3-5 above, wherein theelectrode material is provided by an ink jet method.

3-7. The method of any one of items 3-1 through 3-6 above, wherein theelectrode material is provided on the entire surface of the electrodematerial-repellent area side.

3-8. The method of any one of items 3-1 through 3-7 above, wherein thesemiconductor layer contains an organic semiconductor material.

3-9. The method of any one of items 3-1 through 3-8 above, wherein thesemiconductor layer is formed by an ink jet method.

3-10. The method of any one of items 3-1 through 3-9 above, wherein thesubstrate is transported during manufacture.

3-11. The method of any one of items 3-1 through 3-10 above, wherein thesubstrate is transported in the direction crossing the gate busline, andthe electrode material-repellent area is linearly formed.

3-12. A thin-film transistor sheet manufactured according to the methodof any one of items 3-1 through 3-11 above.

The present invention will be explained below.

The method of the invention is a method of manufacturing a thin-filmtransistor comprising a substrate, and provided thereon, a gateelectrode, a gate insulating layer, a channel comprised of asemiconductor layer, a source electrode and a drain electrode, themethod comprising the steps of a) forming the channel by providing asemiconductive material on the substrate, b) forming an insulating area,which is electrode material-repellent, by providing an electrodematerial-repellent material on the substrate, and c) forming a sourceelectrode on one end of the insulating area and a drain electrode on theother end of the insulating area, by providing an electrode material onthe side of the insulating area.

The structure of the thin-film transistor (hereinafter also referred toas organic thin-film transistor) and the thin-film transistor sheet(hereinafter also referred to as organic thin-film transistor sheet) inthe invention will be explained below, employing FIGS. 1( a) through1(d) and FIG. 2.

As the organic thin-film transistor in the invention, there are a topgate type organic thin-film transistor, and a bottom gate type organicthin-film transistor. The bottom gate type organic thin-film transistorcomprises a substrate, a gate electrode directly or another layer suchas a subbing layer provided on the substrate, a gate insulating layerprovided on the substrate, and a source electrode and a drain electrodeconnected through an organic semiconductor layer on the gate insulatinglayer. The top gate type organic thin-film transistor comprises asubstrate, a source electrode and a drain electrode connected through anorganic semiconductor layer provided on the substrate, a gate insulatinglayer provided thereon, and a gate electrode provided on the gateinsulating layer.

The structural examples thereof will be shown in FIGS. 1( a) through1(d).

FIGS. 1( a) through 1(c) each are structural examples of the bottom gatetype organic thin-film transistor.

In FIG. 1( a), a gate electrode 2 is provided on a substrate 1, a gateinsulating layer 2 a is provided on the gate electrode 2, an organicsemiconductor layer 3 provided on the gate insulating layer 2 a, aninsulating area 6, which is capable of repelling an electrode material,on the organic semiconductor layer 3, and a source electrode 5 on oneside of the insulating area 6 and a drain electrode 4 on the other sideof the insulating area 6.

Although not illustrated in FIG. 1( a), a subbing layer may be providedbetween the substrate 1 and the gate electrode 2, and the gate electrode2 may be anodized to form an oxidized film on the surface.

In FIG. 1( b), a layer 7 (for example, an ink receptive layer) isprovided on the organic semiconductor layer 3, and the insulating area6, which is capable of repelling an electrode material, the sourceelectrode 5 on one side of the insulating area 6 and the drain electrode4 on the other side of the insulating area 6 are provided in the layer7.

FIG. 1( c) is the same as FIG. 1( a), except that an organicsemiconductor layer protective layer (hereinafter also referred to asintermediate layer) 3 a is provided between the organic semiconductorlayer 3 and the insulating area 6. Herein, the organic semiconductorlayer protective layer is provided in order to minimize a chemical orphysical influence of a material constituting the insulating area 6 uponthe organic semiconductor layer.

FIG. 1( d) is a structural example of the top gate type organicthin-film transistor.

In FIG. 1( d), an insulating area 6 is provided on a substrate 1, asource electrode 5 on one side of the insulating area 6, a drainelectrode 4 on the other side of the insulating area 6, an organicsemiconductor layer 3 provided so as to connect the source electrode 5and the drain electrode 4, a gate insulating layer 2 a is provided onthe organic semiconductor layer 3, and a gate electrode 2 is provided onthe gate insulating layer 2 a.

FIG. 2 shows an equivalent circuit diagram of one embodiment of thethin-film transistor sheet, in which plural thin-film transistors in theinvention are arranged.

The thin-film transistor sheet 10 comprises many thin-film transistors14 arranged in a matrix form. Numerical number 11 is a gate busline ofthe gate electrode of each of the thin-film transistors 14, andnumerical number 12 a source busline of the source electrode of each ofthe thin-film transistors 14. Output element 16 is connected to thedrain electrode of each of the organic thin-film transistors 14. Theoutput element 16 is for example, a liquid crystal or an electrophoresiselement, which constitutes pixels in a display. In FIG. 2, liquidcrystal as the output element 16 is shown in an equivalent circuitdiagram comprised of a capacitor and a resistor. Numerical number 15shows a storage capacitor, numerical number 17 a vertical drive circuit,and numerical number 18 a horizontal drive circuit.

The present invention can provide an organic thin-film transistor sheet,in which thin-film transistors are arranged two-dimensionally on aflexible resin, having strong adhesion between the substrate and the TFTconstitution layer, excellent mechanical strength, and strong resistanceto folding of the substrate.

The present invention is a thin-film transistor comprising a substrate,and provided thereon, a gate electrode, a gate insulating layer, asemiconductor layer, a source electrode and a drain electrode, and amanufacturing method thereof comprising the steps of a) forming thesemiconductor layer by providing a semiconductive material on thesubstrate, b) forming an insulating area, which is electrodematerial-repellent, by providing an electrode material-repellentmaterial on the substrate, and c) forming a source electrode on one endof the insulating area and a drain electrode on the other end of theinsulating area, by providing an electrode material.

Next, layers or areas contained in the organic thin-film transistor ofthe invention will be explained.

<<Insulating Area Having an Electrode Material-Repellent Ability>>

The insulating area in the invention having an electrodematerial-repellent ability (hereinafter also referred to simply as theinsulating area in the invention) will be explained below.

In the invention, the insulating area is an area having an ability,which repels a material for an electrode (typically, a drain electrodeor a source electrode). When a thin-film transistor is a bottom gatetype, the insulating area is formed on an organic semiconductor layer,and when an¥ thin-film transistor is a top gate type, the insulatingarea is formed directly or another layer (for example, a subbing layer)on a substrate.

In the invention, the insulating area is preferably formed according toa wet process such as a printing method or an ink jet method, in thatinfluence on an organic semiconductor layer (described later) isminimized. The ink jet method is more preferred.

As the ink jet method, a known ink jet method such as a piezo method canbe used, but a static suction method is preferably used in that aprecise pattern can be formed.

When the insulating area is formed by ejecting ink according to the inkjet method, ink is preferably ejected on an ink receptive layer(described later) in that the insulating area can be adjusted to anappropriate size by the ink receptive layer. The ejected ink is absorbedin the ink receptive layer, and dried or hardened, which can prevent theink from spreading.

As the ink receptive layer, a void type ink receptive layer (describedlater) used in a conventional ink jet recording medium is preferablyused.

The insulating area (electrode material-repellent layer) used in theinvention may be any, as long as it is a layer having an electrodematerial repellent ability. Such an electrode material-repellent layermay be comprised of a layer containing an adhesive such as a silanecoupling agent, a titanate coupling agent or a silicone polymer, or maybe comprised of a layer containing a phenol resin or an epoxy resin,when an electrode material liquid employing a solvent containing wateras a main component is used. Ink repellent layers used in a waterlessplanographic printing plate material as disclosed in Japanese PatentO.P.I. Publication Nos. 2002-131894 and 2002-26826 can be used as theelectrode material-repellent layer in the invention. Among these, theinsulating area is preferably comprised of a silicone rubber layer.

The silicone rubber layer usable in the invention may be optionallyselected from known ones such as those disclosed in Japanese PatentO.P.I. Publication No. 7-164773. A condensation cross-linking typesilicone rubber layer in which a condensation cross-linking typesilicone rubber silicone rubber composition is hardened by acondensation reaction, and an addition cross-linking type siliconerubber layer in which an addition cross-linking type silicone rubbercomposition is hardened by an addition reaction, are preferably used.

The condensation cross-linking type silicone rubber compositioncontains, as essential components, a linear organopolysiloxane having ahydroxyl group at each of the both terminals and a reactive silanecompound capable of forming a silicone rubber layer by cross-linkingwith the linear organopolysiloxane.

The condensation cross-linking type silicone rubber composition to beused in the invention is hardened by the condensation reaction in thepresence of an optional condensation catalyst such as an organiccarboxylic acid, a titanate ester, a stannous ester, an aluminum organicester and a platinum catalyst for raising the reaction efficiency of thereactive silane compound with the linear organopolysiloxane having ahydroxyl group at each of the both terminals.

In the invention, the ratio of the linear organopolysiloxane having ahydroxyl group at each of the both terminals, the reactive silanecompound and the condensation catalyst in the silicone rubber layer is80 to 98%, preferably from 85 to 98%, by weight of the linearorganopolysiloxane having a hydroxyl group at each of the bothterminals, usually from 2 to 20%, preferably from 2 to 15%, morepreferably from 2 to 7%, by weight of the reactive silane compound andfrom 0.05 to 5%, preferably from 0.1 to 3, more preferably from 0.1 to1%, by weight.

In the silicone rubber layer to be used in the invention, a polysiloxanecompound other than the linear organopolysiloxane having a hydroxylgroup at each of the both terminals may be added in a ratio of from 2 to15%, preferably 3 to 12%, by weight of the whole weight of the solidcomponents of the silicone rubber layer. Examples of such the siloxanecompound include polydimethylsiloxane having a trimethylsilyl group ateach of the both terminals and a Mw of from 10,000 to 1,000,000.

The addition cross-linking type silicone rubber composition contains, asthe essential components, an organopolysiloxane compound having at leasttwo aliphatic unsaturated groups in the molecular thereof and anorganopolysiloxane compound having at least two Si—H bonds in themolecular thereof which is cross-linked with the organopolysiloxanecompound having at least two aliphatic unsaturated groups in themolecular thereof to form the silicone rubber layer.

The organopolysiloxane compound having at least two aliphaticunsaturated groups in the molecular thereof may have any structure oflinear, cyclic or branched, and ones having the linear structure arepreferred. Examples of the aliphatic unsaturated group include analkenyl group such as a vinyl group, an aryl group, a butenyl group, apentenyl group, a hexenyl group; a cycloalkenyl group such as acyclopentenyl group, a cyclohexenyl group, a cycloheptenyl group and acyclooctenyl group, and an alkynyl group such as an ethynyl group, apropynyl group, a butynyl group, a pentynyl group and a hexynyl group.Among them, an alkenyl group having an unsaturated bond at the terminalis preferable from the viewpoint of the reactivity, and a vinyl group isparticularly preferable. The substituent other than the aliphaticunsaturated group is preferably a methyl group.

Mw of the organopolysiloxane having at least two aliphatic unsaturatedgroups in the molecule thereof is usually from 500 to 500,000,preferably from 1,000 to 3,000,000.

The organopolysiloxane compound having at least two Si—H bonds in themolecular thereof may have any structure of linear, cyclic or branched,and ones having the linear structure is preferred. The Si—H bond may beexisted at either the terminal or intermediate portion of the siloxaneskeleton, and the ratio of the hydrogen atom to the total number of thesubstituent is usually from 1 to 60%, preferably from 2 to 50%. Thesubstituent other than the hydrogen atom is preferably a methyl group.The Mw of the organopolysiloxane compound having at least two Si—H bondsin the molecular thereof is usually from 300 to 300,000, preferably from500 to 200,000. The Mw too high tends to cause lowering in thesensitivity and in the image reproducibility.

An addition reaction catalyst is usually used to occur the additionreaction of the organopolysiloxane compound having at least twoaliphatic unsaturated groups in the molecular thereof with theorganopolysiloxane compound having at least two Si—H bonds in themolecular thereof. The addition reaction catalyst can be optionallyselected from known ones, and a platinum catalyst is preferably used.One or a mixture selected from metals of platinum group and compounds ofmetal of platinum group may be preferably used as the addition reactioncatalyst. Examples of the metal of platinum group include elementalplatinum such as platinum black, elemental palladium such as palladiumblack and elemental rhodium. Examples of the compound of metal ofplatinum group include chloroplatinic acid, a platino-olefin complex, aplatino-alcohol complex, a platino-ketone complex, a complex of platinumand vinylsiloxane, platinum tetrakis(triphenyl-phosphine) and palladiumtetrakis(triphenylphosphine). Among them, chloroplatinic acid orplatino-olefin complex dissolved in an alcoholic solvent, an ethersolvent or a carbon hydride solvent is particularly preferred.

In the above-mentioned silicone rubber layer, the content of theorganopolysiloxane having at least two aliphatic unsaturated groups inthe molecule is 80 to 98%, and preferably from 85 to 98%, the content ofthe organosiloxane having at least two Si—H bonds in the molecular isusually from 2 to 20%, and preferably from 2 to 15% by weight, and thecontent of the addition reaction catalyst is from 0.0001 to 10%, andpreferably from 0.0001 to 5% by weight.

An amino-containing organic silicon compound having a hydrolyzable grouprepresented by formula (VII) disclosed in Japanese Patent O.P.I.Publication Nos. 10-244773 may be added to the addition cross-linkingtype silicone rubber layer.

The content of the amino-containing organic silicon compound in thesilicone rubber layer is from 0 to 10%, and preferably from 0 to 5% byweight. A hardening delaying agent may be added into the additioncross-linking silicone rubber layer. The hardening delaying agent can beoptionally selected from compounds known as the hardening delaying agentsuch as an acetylene alcohol, a maleic ester, a silylated compound ofacetylene alcohol, a silylated compound of maleic acid, a triacylisocyanulate and a vinylsiloxane.

The adding amount of the hardening delaying agent is usually from 0.0001to 1.0 parts by weight of the whole solid components of the siliconerubber layer, even though the amount may be different according to thedesired hardening speed.

In the invention, the insulating area is preferably formed according tothe printing method, preferably a n ink jet method described above,employing a solution in which the silicone rubber composition describedabove is dissolved in a suitable solvent. Examples of the solventinclude n-hexane, cyclohexane, petroleum ether, and aliphatic carbonhydride solvents Isopar E, H and G, manufactured by Exxon Co., Ltd., anda mixture of the foregoing solvents with a ketone such as methyl ethylketone and cyclohexanone, an ester such as butyl acetate, amyl acetateand ethyl propionate, a carbon hydride or a halogenated carbon hydridesuch as toluene, xylene, monochlorobenzene, carbon tetrachloride,trichloroethylene and trichloroethane, an ether such as methylcellosolve, ethyl cellosolve and tetrahydrofuran, and polypropyleneglycol monomethyl ether acetate, pentoxon or dimethylformamide.

A super water-repellent material disclosed in “SCIENCE”, Vol. 299, 1377can be also used.

The insulating area has a light transmittance of preferably not morethan 10%. This can prevent deterioration due to light of the organicsemiconductor layer.

In the invention, light transmittance shows an average lighttransmittance of light having a wavelength capable of generating a lightgenerating carrier in the organic semiconductor layer. Generally, alight with a wavelength from 350 to 750 nm is preferably shielded.

In the invention, arrival of light at the organic semiconductor layershould be prevented in order to minimize deterioration due to light ofthe organic semiconductor layer. Accordingly, light transmittance may bereduced not only by the insulating area but also by an intermediatelayer, an ink receptive layer or another layer, which may be provided onthe organic semiconductor layer (all layers in the case of multi-layers)to give a light transmittance of not more than 10%, and preferably notmore than 1%.

In order to reduce light transmittance of the layer, the layer cancontain colorants such as pigments and dyes, or UV absorbing agents.

In the invention, the thickness of the insulating area of the thin-filmtransistor or the thin-film transistor is preferably from 0.05 to 10 μm,and more preferably from 0.5 to 2 μm

<<Electrode Material: Material for a Source Electrode or DrainElectrode>>

The method of the invention comprises providing an electrode material asdescribed later on the insulating area side, wherein the insulating areaseparates the provided electrode material to form a source layer on oneend of the insulating area and a drain electrode on the other end of theinsulating area.

The electrode materials for constituting a gate electrode or a sourceelectrode are not particularly restricted as long as they areelectrically conductive materials. Employed as the materials areplatinum, gold, silver, nickel, chromium, copper, iron, tin, antimony,lead, tantalum, indium, palladium, tellurium, rhenium, iridium,aluminum, ruthenium, germanium, molybdenum, tungsten, tinoxide-antimony, indium oxide-tin (ITO), fluorine-doped zinc oxide, zinc,carbon, graphite, glassy carbon, silver paste as well as carbon paste,lithium, beryllium, sodium, magnesium, potassium, calcium, scandium,titanium, manganese, zirconium, gallium, niobium, sodium,sodium-potassium alloy, magnesium, lithium, aluminum, magnesium/coppermixtures, magnesium/silver mixtures, magnesium/aluminum mixtures,magnesium/indium mixtures, aluminum/aluminum oxide mixtures, andlithium/aluminum mixtures. As materials for the above electrodes,electrically conductive polymers known in the art, which increaseelectrical conductivity upon being doped, are preferably employed.Examples thereof include electrically conductive polyaniline,electrically conductive polypyrrole, electrically conductivepolythiophene, and a complex of polyethylenedioxythiophene andpolystyrene sulfonic acid. The source and drain electrodes are thoseproviding less electrical resistance at an interface between theelectrodes and the semiconductor layer, and are preferably electrodescomprised of a conductive polymer, platinum, gold, silver, or ITO inp-type semiconductor.

In the invention, the source electrode and drain electrode arepreferably electrodes formed from a flowable electrode material such asa solution, paste, ink, or a dispersion solution containing the aboveelectrically conductive material, and more preferably electrodes formedfrom a flowable electrode material containing a conductive polymer,platinum, gold, silver, or copper. As a solvent or a dispersion medium,a solvent or dispersion medium containing water in an amount of not lessthan 60%, and more preferably not less than 90% is preferred in thatdamage to the organic semiconductor is reduced.

As a metal particle-containing flowable electrode material, a knownconductive paste can be used. The metal particle-containing dispersionis preferably a dispersion in which metal particles with a particle sizeof from 1 to 50 nm, and preferably from 1 to 10 nm, and optionally adispersion stabilizer are dispersed in water or an appropriate solvent.

Materials for the metal particles include platinum, gold, silver,nickel, chromium, copper, iron, tin, antimony, lead, tantalum, indium,palladium, tellurium, rhenium, iridium, aluminum, ruthenium, germanium,molybdenum, tungsten, and zinc.

The electrode is preferably formed from a metal particle dispersion inwhich metal particles of these metals are dispersed in a dispersionmedium such as water or an organic solvent in the presence of an organicdispersion stabilizer

Methods for preparing such a metal particle dispersion include aphysical preparation method such as a gas vaporization method, asputtering method, or a metallic vapor preparation method and a chemicalpreparation method such as a colloid method or a co-precipitation methodin which metal ions are reduced in a liquid phase to produce metalparticles. The metal particles dispersion are preferably ones preparedaccording to a colloid method disclosed in Japanese Patent O.P.I.Publication Nos. 11-76800, 11-80647, 11-319538, and 2000-239853, or onesprepared according to a gas vaporization method disclosed in JapanesePatent O.P.I. Publication Nos. 2001-254185, 2001-53028, 2001-35814,2001-35255, 2001-124157 and 2000-123634. An electrode pattern is formedfrom these metal particle dispersions dried, and optionally subjected toheat treatment at from 100 to 300° C., and preferably from 150 to 200°C., whereby the metal particles are heat-fused to form an electrode inan intended form.

Methods for forming the electrode include a method in which aphotolithographic method or a lift-off method, known in the art, isapplied to an electrically conductive layer of the materials describedabove, which has been formed employing a vacuum deposition method or asputtering method, and a method in which a resist layer is subjected toetching which has been prepared employing thermal transfer or ink jetprinting onto a foil of metal such as aluminum or copper. Further, anelectrically conductive polymer solution or dispersion, or a minuteelectrically conductive particle dispersion may be subjected directly topatterning, employing ink jet printing to obtain an electrode. Anelectrode may also be formed in such a manner that a coated layer issubjected to lithography or laser ablation. In addition, a method mayalso be employed in which ink comprising either an electricallyconductive polymer or minute electrically conductive particles, orelectrically conductive paste is subjected to patterning, employing anyof the printing methods such as letter press, intaglio printing,lithography, or screen printing.

In the invention, a method of providing an electrode material on theinsulating area having an electrode material-repellent property in orderto form a source or drain electrode may be any as long as it can formthe source or drain electrode.

When the source electrode and drain electrode are formed by ejecting inkcontaining the electrode material on the insulating area according tothe ink jet method, an ink receptive layer is preferably provided inthat the electrode formation area can be adjusted to an appropriate sizeby the ink receptive layer. As the ink receptive layer, avoid-containing ink receptive layer used in a conventional ink jetrecording medium is preferably used.

The ink receptive layer will be explained below.

<<Ink Receptive Layer>>

The method of the invention comprises providing an electrodematerial-repellent material on a substrate to form an insulating area,and providing an electrode material on the insulating area side to forma first electrode on one end of the insulating area and a secondelectrode on the other end of the insulating area. Herein, it ispreferred that the electrode material-repellent material and/or theelectrode material is preferably provided as solution or dispersion ontothe ink receptive layer above according to an ink jet method.

The ink receptive layer is preferably a void-containing ink receptivelayer (hereinafter also referred to simply as void-containing layer).The void-containing layer is obtained by coating of a compositioncontaining a water soluble polymer and fine particles.

Listed as fine particles usable for the void-containing ink receptivelayer are inorganic particles or organic particles. Inorganic particlesare preferred, since fine particles are easily obtained. Examples of theinorganic particles include white inorganic pigments such as, forexample, precipitated calcium carbonate, heavy calcium carbonate,magnesium carbonate, kaolin, clay, talc, calcium sulfate, bariumsulfate, titanium dioxide, zinc oxide, zinc hydroxide, zinc sulfide,zinc carbonate, hydrotalcite, aluminum silicate, diatomaceous earth,calcium silicate, magnesium silicate, synthetic non-crystalline silica,colloidal silica, alumina, colloidal alumina, false boehmite, aluminumhydroxide, lithopone, zeolite, magnesium hydroxide, and the like. Theparticles may exist in the void-containing layer in the form of primaryparticles, or aggregated secondary particles.

The inorganic particles are preferably alumina, false boehmite,colloidal silica, or silica particles synthesized by a gas phase method,and more preferably silica particles synthesized by a gas phase method.The silica particles synthesized by a gas phase method may be thosesurface-treated with Al. The Al content of the silica particlessurface-treated with Al is from 0.05 to 5% by weight based on thesilica.

The particle size of the particles may be any, but is preferably notmore than 1 μm, more preferably not more than 0.2 μm, and mostpreferably not more than 0.1 μm. Herein, the lower limit of the particlesize is not specifically limited, but is preferably, more preferably notless than 0.003 μm, and more preferably not less than 0.005 μm, in viewof manufacture of the particles.

The average particle size of the particles described above is determinedin such a manner that particles located at the cross-section or thesurface of the void-containing layer are observed employing an electronmicroscope, the size of randomly selected 100 particles are determined,and the simple average (arithmetic average) is computed. The particlesize of the individual particle is expressed in terms of a diameter of acircle having the same area as the projected area of the particle.

The particles may exist in the void-containing layer in the form ofprimary particles, secondary particles or higher order particles. Theparticles used for the calculation of the average particle size arethose independently existing in the porous layer.

The particle content of the aqueous coating solution is preferably from5 to 40% by weight, and more preferably from 7 to 30% by weight.

The water soluble binder contained in the ink receptive layer with voidsis not specifically limited, and may be any known water soluble binder.Examples of the water soluble binder include gelatin, polyvinylpyrrolidone, polyethylene oxide, polyacryl amide and polyvinyl alcohol.Polyvinyl alcohol is especially preferred.

Polyvinyl alcohol interacts with the inorganic particles, exhibitsstrong retention property to the inorganic particles, and is relativelylow in humidity dependency of hygroscopic property. The polyvinylalcohols preferably used in the invention include an ordinary polyvinylalcohol obtained by hydrolyzing polyvinyl acetate, and a modifiedpolyvinyl alcohol such as a cation-modified polyvinyl alcohol or ananion-modified polyvinyl alcohol.

The polyvinyl alcohol obtained by hydrolyzing polyvinyl acetate has anaverage polymerization degree of preferably not less than 300, and morepreferably 1000 to 5,000. The polyvinyl alcohol has a saponificationdegree of preferably 70 to 100 mol %, and more preferably 80 to 99.5 mol%.

The cation-modified polyvinyl alcohol is a polyvinyl alcohol having aprimary to tertiary amino group or a quaternary ammonium group in itsmain or side chain, and is obtained by saponifying a copolymer of vinylacetate and an ethylenically unsaturated monomer having a cationicgroup.

Examples of the ethylenically unsaturated monomer having a cationicgroup include trimethyl-(2-acrylamide-2,2-dimethylethyl)ammoniumchloride, trimethyl-(3-acrylamide-3,3-dimethylpropyl)ammonium chloride,N-vinylimidazole, N-vinyl-2-methylimidazole,N-(3-dimethylaminopropyl)methacrylamide, hydroxyethyltrimethylammoniumchloride, trimethyl-(3-methacrylamidopropyl)ammonium chloride, andN-(1,1-dimethyl-3-dimethylaminopropyl)acrylamide.

The content of the monomer having a cationic group in thecation-modified polyvinyl alcohol is preferably 0.1 to 10 mol %, morepreferably 0.2 to 5 mol %, based on the vinyl acetate content.

Examples of the anion-modified polyvinyl alcohol include polyvinylalcohol having an anionic group disclosed in Japanese Patent O.P.I.Publication No. 1-206088, a copolymer of vinyl alcohol and a vinylcompound having a water-solubilizing group disclosed in Japanese PatentO.P.I. Publication Nos. 61-237681 and 63-307979, and a modifiedpolyvinyl alcohol having a water-solubilizing group disclosed inJapanese Patent O.P.I. Publication Nos. 7-285265.

Examples of the nonion-modified polyvinyl alcohol include a polyvinylalcohol derivative prepared by the addition of polyethylene oxide to apart of hydroxy groups of polyvinyl alcohol disclosed in Japanese PatentO.P.I. Publication No. 7-9758, and a block copolymer of a vinyl compoundhaving a hydrophobic group and vinyl alcohol disclosed in JapanesePatent O.P.I. Publication No. 8-25795.

Polyvinyl alcohols can be used as a mixture of two or more thereof,according to the polymerization degree and kinds of modification. Whenpolyvinyl alcohol with a polymerization degree of not less than 2000,polyvinyl alcohol with a polymerization degree of not more than 1000 isin advance added in an amount of 0.05 to 10% by weight, and preferably0.1 to 5% by weight based on the inorganic particle weight to aninorganic particle dispersion, and then the polyvinyl alcohol with apolymerization degree of not more than 1000 is added, which exhibits nomarked viscosity increase.

The content ratio of the particles to the hydrophilic polymer in thevoid-containing ink receptive layer is preferably 2 to 20 by weight,more preferably 2.5 to 12, and still more preferably 3 to 10. This ratioin the void-containing layer maintains a proper void ratio andsufficient void volume, prevents an excessive hydrophilic binder fromswelling and clogging the voids during ink ejection, maintains a properink absorption speed, and prevents cracks from occurring in thevoid-containing layer.

the exposed material to form an insulating area.

In the invention, the formation of the insulating area is also carriedout by providing a light sensitive layer on the substrate, providing anelectrode material-repellent insulating layer on the light sensitivelayer, exposing the resulting material and developing the exposedmaterial to form an insulating area. The light sensitive layer ispreferably an ablation layer.

In the invention, the ablation layer refers to a layer to be ablated byirradiation of a high density energy light. Adhesion between theablation layer and the electrode material repellent layer varies due toby irradiation of a high density energy light. Herein, “ablated” refersto phenomenon in which an ablation layer is completely scattered or apart of the layer is destroyed and/or scattered by its physical orchemical change, or the physical or chemical change occurs only near theinterface between the layer and its adjacent layer. In the invention, aresist can be formed employing this phenomenon, and then the insulatingarea is formed and then electrodes can be formed.

An ablation layer used in the invention contains an actinic lightabsorbing agent, a binder resin, and optionally various additives.

As the actinic light absorbing agent, there are various organic orinorganic materials capable of absorbing actinic light. For example,when infrared laser is used as actinic light, pigment absorbing infraredlight, dyes, metals, metal oxides, metal nitrides, metal carbonates,metal borides, graphite, carbon black, titanium black, and ferromagneticmetal powder such as metal magnetic powder containing Al, Fe, Ni, or Coas a main component can be used. Among these, carbon black, dyes such ascyanine dyes and Fe containing ferromagnetic metal powder are preferred.The content of the actinic light absorbing agent in the ablation layeris from 30 to 95% by weight, and preferably from 40 to 80% by weight.

The binder resin used in the invention may be any resin as long as itcan carry the actinic light absorbing agent described above. Examples ofthe binder resin include a polyurethane resin, a polyester resin, avinyl chloride resin, a polyvinyl acetal resin, a cellulose resin, anacryl resin, a phenoxy resin, a polycarbonate resin, a polyamide resin,a phenol resin, and an epoxy resin. The content of the binder resin inthe ablation layer is from 5 to 70% by weight, and preferably from 20 to60% by weight.

The high density energy light can be used without any special limitationas long as it is light capable of ablating an ablation layer onexposure. As an exposure method, flash exposure may be carried outthrough a photomask employing a xenon lamp, a halogen lamp or a mercurylamp, or scanning exposure may be carried out employing a convergentlaser light. Infrared laser, particularly a semiconductor laser havingan output power of from 20 to 200 mW per one beam is preferably used.The energy density used is preferably from 50 to 500 mJ/cm², and morepreferably from 100 to 300 mJ/cm².

As another light sensitive resin layer, a light sensitive resin layercan be preferably used, and a well-known positive working or negativeworking material can be used, but a laser sensitive material ispreferably used. As such a material, there are (1) a dye sensitizedphoto-polymerizable light-sensitive material disclosed in JapanesePatent O.P.I. Publication Nos. 11-271969, 2001-117219, 11-311859, and11-352691, (2) an infrared laser-sensitive negative working materialdisclosed in Japanese Patent O.P.I. Publication No. 9-179292, U.S. Pat.No. 5,340,699, and Japanese Patent O.P.I. Publication Nos. 10-90885,2000-321780, and 2001-154374, and (3) an infrared laser-sensitivepositive working material in Japanese Patent O.P.I. Publication Nos.9-171254, 5-115144, 10-87733, 9-43847, 10-268512, 11-194504, 11-223936,11-84675, 11-174681, 7-282575, and 2000-56452, WO97/39894, andWO98/42507. The material of item (2) or (3) above is preferred in thatits use is not limited to use in the dark.

Solvents for preparing a coating liquid of the light sensitive resinlayer include propylene glycol monomethyl ether, propylene glycolmonoethyl ether, methyl cellosolve, methyl cellosolve acetate, ethylcellosolve, ethyl cellosolve acetate, dimethylformamide,dimethylsulfoxide, dioxane, acetone, cyclohexanone, trichloroethylene,and methyl ethyl ketone. These solvents may be used singly or as amixture of two or more kinds thereof.

As a method for forming a light sensitive resin layer, there is acoating method such as a spray coating method, a spin coating method, ablade coating method, a dip coating method, a casting method, a rollcoating method, a bar coating method or a die coating method.

As a light source for the imagewise exposure of the light sensitivelayer, laser is preferred, and examples of the laser include an argonlaser, a semi-conductive laser, a He—Ne laser, a YAG laser, and a carbondioxide gas laser, and a semi-conductive laser, which has an emissionwavelength at the infrared wavelength regions, is preferred. The outputpower of the laser is suitably not less than 50 mW, and preferably notless than 100 mW, which forms an image with high accuracy.

The light sensitive layer is exposed and developed to form an insulatingarea. Adhesion between the light sensitive layer and the insulatinglayer varies due to the exposure, and the exposed light sensitive layeris developed with for example, a brush whereby the light sensitive layerat the exposed portions are removed to form an insulating area.

The method of the invention comprises forming a semiconductor layer,forming the insulating area on the formed semiconductor layer, thenproviding the electrode material as described above on the insulatingarea, wherein the insulating area separates the provided electrodematerial to form a source layer on one end of the insulating area and adrain electrode on the other end of the insulating area.

The semiconductor layer and its formation will be explained below.

<<Semiconductor Layer>>

The semiconductor layer in the invention can contain a known inorganicsemiconductive material such as amorphous silicon or polysilicone or aknown organic semiconductive material, and the semiconductor layer inthe invention is preferably an organic semiconductor layer containing anorganic semiconductive material.

(Organic Semiconductive Material)

As the organic semiconductive materials in the invention, π-conjugatedmaterials are used. Examples of the π-conjugated materials includepolypyrroles such as polypyrrole, poly(N-substituted pyrrole),poly(3-substituted pyrrole), and poly(3,4-disubstituted pyrrole);polythiophenes such as polythiophene, poly(3-substituted thiophene),poly(3,4-disubstituted thiophene), and polybenzothiophene;polyisothianaphthenes such as polyisothianaphthene;polythienylenevinylenes such as polythienylenevinylene;poly(p-phenylenevinylenes) such as poly(p-phenylenevinylene);polyanilines such as polyaniline, poly(N-substituted aniline),poly(3-substituted aniline), and poly(2,3-substituted aniline);polyacetylnenes such as polyacetylene; polydiacetylens such aspolydiacetylene; polyazulenes such as polyazulene; polypyrenes such aspolypyrene; polycarbazoles such as polycarbazole and poly(N-substitutedcarbazole), polyselenophenes such as polyselenophene; polyfurans such aspolyfuran and polybenzofuran; poly(p-phenylenes) such aspoly(p-phenylene); polyindoles such as polyindole; polypyridazines suchas polypyridazine; polyacenes such as naphthacene, pentacene, hexacene,heptacene, dibenzopentacene, tertabenzopentacene, pyrene, dibenzopyrene,chrysene, perylene, coronene, terylene, ovalene, quoterylene, andcircumanthracene; derivatives (such as triphenodioxazine,triphenodithiazine, hexacene-6,15-quinone) in which some of carbon atomsof polyacenes are substituted with atoms such as N, S, and O or with afunctional group such as a carbonyl group; polymers such as polyvinylcarbazoles, polyphenylene sulfide, and polyvinylene sulfide; andpolycyclic condensation products described in Japanese Patent O.P.I.Publication No. 11-195790.

Further, oligomers having repeating units in the same manner as in theabove polymers, for example, thiophene hexamers includingα-sexithiophene, α, ω-dihexyl-α-sexithiophene,α,ω-dihexyl-α-quiinquethiophene, andα,ω-bis(3-butoxypropyl)-α-sexithiophene, or styrylbenzene derivatives,can be suitably employed.

Further, listed are metallophthalocyanines such as copperphthalocyanine, and fluorine-substituted copper phthalocyaninesdescribed in Japanese Patent O.P.I. Publication No. 11-251601;tetracarboxylic acid diimides of condensed ring compounds includingnaphthalene tetracarboxylic acid imides such as naphthalene1,4,5,8-teracarboxylic acid diimide,N,N′-bis(4-trifluoromethylbenzyl)naphthalene 1,4,5,8-tretracarboxylicacid diimide, N,N′-bis(1H,1H-perfluoroctyl)naphthalene1,4,5,8-tetracarboxylic acid diimide derivatives,N,N′-bis(1H,1H-perfluorobutyl)naphthalene 1,4,5,8-tetracarboxylic aciddiimide derivatives, N,N′-dioctylnaphthalene 1,4,5,8-tetracarboxylicacid diimide derivatives, and naphthalene 2,3,6,7-tetracarboxylic aciddiimides, and anthracene tetracarbocylic acid diimides such asanthracene 2,3,6,7-tetracarboxylic acid diimides; fullerenes such asC₆₀, C₇₀, C₇₆, C₇₈, and C₈₄; carbon nanotubes such as SWNT; and dyessuch as merocyanines and hemicyanines.

Of these π conjugated compounds, preferably employed is at least oneselected from the group consisting of oligomers which have thiophene,vinylene, thienylenevinylene, phenylenevinylene, p-phenylene, theirsubstitution product or at least two kinds thereof as a repeating unitand have a repeating unit number n of from 4 to 10, polymers which havethe same unit as above and a repeating unit number n of at least 20,condensed polycyclic aromatic compounds such as pentacene, fullerenes,condensed cyclic tetracarboxylic acid diimides of condensed ringcompounds, and metallo-phthalocyanines.

Further, employed as other materials for organic semiconductors may beorganic molecular complexes such as a tetrathiafulvalene(TTF)-tetracyanoquinodimethane (TCNQ) complex, abisethylenetetrathiafulvalene (BEDTTTF)-perchloric acid complex, aBEDTTTF-iodine complex, and a TCNQ-iodine complex. Still further,employed may be a conjugated polymers such as polysilane andpolygermane, as well as organic-inorganic composite materials describedin Japanese Patent O.P.I. Publication No. 2000-260999.

In the invention, the organic semiconductor layer may be subjected to aso-called doping treatment (referred to also as simply doping) byincorporating in the layer, materials working as an acceptor whichaccepts electrons, for example, acrylic acid, acetamide, materialshaving a functional group such as a dimethylamino group, a cyano group,a carboxyl group and a nitro group, benzoquinone derivatives, ortetracyanoethylene, tetracyanoquinodimethane or their derivatives, ormaterials working as a donor which donates electrons, for example,materials having a functional group such as an amino group, a triphenylgroup, an alkyl group, a hydroxyl group, an alkoxy group, and a phenylgroup; substituted amines such as phenylenediamine; anthracene,benzoanthracene, substituted benzoanthracenes, pyrene, substitutedpyrene, carbazole and its derivatives, and tetrathiafulvalene and itsderivatives.

The doping herein means that an electron accepting molecule (acceptor)or an electron donating molecule (donor) is incorporated in the organicsemiconductor layer as a dopant. Accordingly, the layer, which has beensubjected to doping, is one which comprises the condensed polycyclicaromatic compounds and the dopant. As the dopant in the presentinvention, a known dopant can be used.

(Formation of Organic Semiconductor Layer)

The methods for forming the organic semiconductor layer include a vacuumdeposition method, a molecular beam epitaxial growth method, an ioncluster beam method, a low energy ion beam method, an ion platingmethod, a CVD method, a sputtering method, a plasma polymerizationmethod, an electrolytic polymerization method, a chemical polymerizationmethod, a spray coating method, a spin coating method, a blade coatingmethod, a dip coating method, a casting method, a roll coating method,an bar coating method, a die coating method, an ink jet method and an LBmethod. These methods may be used according to kinds of materials used.However, of these, a spin coating method, a blade coating method, a dipcoating method, a roll coating method, a bar coating method, a diecoating method, and an ink jet method are preferred in view ofproductivity in which a thin layer with high precision can be easilyobtained employing a solution of an organic semiconductive material fromthe viewpoint of productive efficiency.

When a precursor such as pentacene is soluble in a solvent as disclosedin Advanced Material 1999, Vol. 6, p. 480-483, a precursor layer formedby coating of the precursor solution may be heat treated to form anintended organic material layer.

The thickness of the organic semiconductor layer is not specificallylimited. The thickness of an active layer comprised of the organicsemiconductor materials often has a great influence on properties of theresultant transistor. Accordingly, the thickness of the layer differsdue to kinds of the organic semiconductor materials used, but it isordinarily not more than 1 μm, and preferably from 10 to 300 nm.

When the electrode material is ejected on the insulating area accordingto the ink jet method, ink containing the electrically conductivematerial is used. As a solvent or a dispersion medium used in the ink,one is preferred which minimizes damage to the organic semiconductor(organic semiconductor layer). Degree of the damage depends on anorganic semiconducting compound used, but when pentacene is used, asolvent or dispersion medium containing water in an amount of not lessthan 50%, more preferably not less than 60%, and most preferably notless than 90% is preferred.

A transparent conductive film comprised of the material described abovecan be used. Herein, “transparent” means that a light (UV-visible light)transmittance is not less than 50%, and preferably not less than 80%.

<<Intermediate Layer>>

One of the preferred embodiments of the organic thin-film transistor inthe invention comprises an intermediate layer (hereinafter also referredto as organic semiconductor layer protective layer) in contact with theorganic semiconductor layer. The intermediate layer, which is providedso as to be in contact with the organic semiconductor layer, can preventdeterioration of the organic semiconductor layer due to air or water.Further, the intermediate layer can provide excellent resistance tofolding, whereby deterioration due to folding of performance of thetransistor can be minimized.

The intermediate layer can provide an effect of minimizing damage to theorganic semiconductor layer during formation of the insulating area,although the effect depends on kinds of a organic semiconductivematerial, a material for forming the insulating area or a solvent used.

As a material for the intermediate layer, a material is used which hasno influence on the organic semiconductor layer during or aftermanufacture of an organic thin-film transistor element.

Examples of such a material include a phenol resin such as polyvinylphenol or a novolak resin, an epoxy resin and a hydrophilic polymer.

The hydrophilic polymer hereinafter referred to is a polymer soluble ordispersible in water, an aqueous acidic or alkali solution, or anaqueous solution of various surfactants. Examples of the hydrophilicpolymer include polyvinyl alcohol, a homopolymer or copolymer of HEMA,acrylic acid, or acryl amide. As another examples thereof, a materialcontaining inorganic oxides or inorganic nitrides is also preferred,since it has no influence on the organic semiconductor layer and is notinfluenced during coating of another layer. Further, a material to beused in a gate insulating layer described later can be also used.

The intermediate layer containing inorganic oxides or inorganic nitridesis preferably formed according to an atmospheric pressure plasma method.

The plasma layer formation method at atmospheric pressure means a methodwherein a reactive gas is plasma-excited by discharge conducted atatmospheric pressure or at approximately atmospheric pressure, whereby athin-film is formed on a substrate. The method (hereinafter referred toalso as an atmospheric pressure plasma method) is described in JapanesePatent O.P.I. Publication Nos. 11-61406, 11-133205, 2000-121804,2000-147209, and 2000-185362. This method can form a thin film havinghigh performance at high productivity.

<<Gate Insulating Layer>>

Various insulating layers may be employed as the gate insulating layerof the organic thin-film transistor of the invention. The insulatinglayer is preferably an inorganic oxide layer comprised of an inorganicoxide with high dielectric constant. Examples of the inorganic oxideinclude silicon oxide, aluminum oxide, tantalum oxide, titanium oxide,tin oxide, vanadium oxide, barium strontium titanate, barium zirconatetitanate, zirconic acid lead carbonate, lead lanthanum titanate,strontium titanate, barium titanate, barium magnesium fluoride, bismuthtitanate, strontium bismuth titanate, strontium bismuth tantalate,bismuth niobate tantalate, and yttrium trioxide. Of these, siliconoxide, silicon nitride, aluminum oxide, tantalum oxide or titanium oxideis particularly preferred. An inorganic nitride such as silicon nitrideor aluminum nitride can be also suitably used.

The methods for forming the above layer include a dry process such as avacuum deposition method, a molecular beam epitaxial growth method, anion cluster beam method, a low energy ion beam method, an ion platingmethod, a CVD method, a sputtering method, or an atmospheric pressureplasma method, a wet process such as a spray coating method, a spincoating method, a blade coating method, a dip coating method, a castingmethod, a roll coating method, an bar coating method, or a die coatingmethod, and a patterning method such as a printing method or an ink-jetmethod. These methods can be used due to kinds of materials used in theinsulating layer.

As the typical wet process can be used a method of coating a dispersionliquid and drying, the liquid being obtained by dispersing inorganicoxide particles in an organic solvent or water optionally in thepresence of a dispersant such as a surfactant, or a so-called sol gelmethod of coating a solution of an oxide precursor such as an alkoxideand drying.

Among the above, the preferred is an atmospheric pressure plasma method.

It is preferred that the gate insulating layer is comprised of ananodization film or an anodization film and an insulating film. Theanodization film is preferably subjected to sealing treatment. Theanodization film is formed on a metal capable of being anodized byanodizing the metal according to a known method.

Examples of the metal capable of being anodized include aluminum andtantalum. An anodization treatment method is mot specifically limitedand the known anodization treatment method can be used. Anodizationtreatment forms an anodization film. An electrolytic solution used inthe anodization treatment may be any as long as it can form a porousoxidation film. Examples of electrolytes in the electrolytic solutioninclude sulfuric acid, phosphoric acid, oxalic acid, chromic acid, boricacid, sulfamic acid, benzene sulfonic acid or their salt, and a mixturethereof. Anodization treatment conditions cannot be specified since theyvary due to kinds of an electrolytic solution used. Generally, theconcentration of the electrolytic solution is from 1 to 80% by weight,temperature of the electrolytic solution is from 5 to 70 C, electriccurrent density is from 0.5 to 60 A/dm2, voltage applied is from 1 to100 V, and electrolytic time is from 10 seconds to 5 minutes. It ispreferred that an aqueous solution of sulfuric acid, phosphoric acid orboric acid is used as an electrolytic solution, and direct current isused. Alternating current can be also used. Anodization treatment ispreferably carried out at an electric current density of from 0.5 to 20A/dm2 at an electrolytic solution temperature of from 20 to 50 for 20 to250 seconds.

Examples of the organic compound used in an organic compound layerinclude polyimide, polyamide, polyester, polyacrylate, a photo-curableresin such as a photo-radical polymerizable or photo-cationpolymerizable resin, a copolymer containing an acrylonitrile unit,polyvinyl phenol, polyvinyl alcohol, novolak resin, andcyanoethylpullulan.

As a method of forming the organic compound layer, the wet processdescribed above is preferably used.

An inorganic oxide layer and an organic oxide layer can be used incombination and superposed. The thickness of the insulating layer isgenerally 50 nm to 3 μm, and preferably from 100 nm to 1 μm.

An orientation layer may be provided between the gate insulating layerand the organic semiconductor layer. As the orientation layer, a selforganization layer is preferably used which is formed from a silanecoupling agent such as octadecyltrichlorosilane ortrichloromethylsilane, alkane phosphoric acid, alkane sulfonic acid, oran alkane carboxylic acid.

<<Material for a Gate Electrode>>

As a material for a gate electrode, the same materials or electricallyconductive material as denoted in the source or drain electrode abovecan be used. As methods for forming the gate electrode, the methods asdenoted in the gate insulating layer above are used.

<<Substrate>>

The substrate in the invention will be explained below.

In the invention, the substrate is a resin sheet comprised of a resin.Examples of the resin sheet include resin sheets comprised of, forexample, polyethylene terephthalate (PET), polyethylene naphthalate(PEN), polyethersulfone (PES), polyetherimide, polyether ether ketone,polyphenylene sulfide, polyallylate, polyimide, polycarbonate (PC),cellulose triacetate (TAC), or cellulose acetate propionate (CAP). Useof such a resin sheet makes it possible to decrease weight, to enhanceportability, and to enhance durability against impact due to itsflexibility, as compared to glass.

In the invention, a transistor protective layer can be provided on theorganic thin-film transistor of the invention. Materials for thetransistor protective layer include inorganic oxides or nitridesdescribed above, and the transistor protective layer is preferablyformed according to the atmospheric pressure plasma method, wherebyresistance of the organic thin-film transistor is improved.

<<Subbing Layer>>

The organic thin-film transistor of the invention comprises a subbinglayer containing a compound selected from inorganic oxides or inorganicnitrides or a subbing layer containing a polymer.

The inorganic oxides contained in the subbing layer include siliconoxide, aluminum oxide, tantalum oxide, titanium oxide, tin oxide,vanadium oxide, barium strontium titanate, barium zirconate titanate,zirconic acid lead carbonate, lead lanthanum titanate, strontiumtitanate, barium titanate, barium magnesium fluoride, bismuth titanate,strontium bismuth titanate, strontium bismuth tantalate, bismuth niobatetantalate, and yttrium trioxide. The inorganic nitrides include siliconnitride and aluminum nitride.

Of these, silicon oxide, aluminum oxide, tantalum oxide, titanium oxideor silicon nitride is preferred.

In the invention, the subbing layer containing a compound selected frominorganic oxides or inorganic nitrides is preferably formed according tothe atmospheric pressure plasma method described above.

Examples of the polymer used in the subbing layer include a polyesterresin, a polycarbonate resin, a cellulose resin, an acryl resin, apolyurethane resin, a polyethylene resin, a polypropylene resin, apolystyrene resin, a phenoxy resin, a norbornene resin, an epoxy resin,vinyl chloride-vinyl acetate copolymer, a vinyl chloride resin, vinylacetate-vinyl alcohol copolymer, a partially saponificated vinylchloride-vinyl acetate copolymer, vinyl chloride-vinylidene chloridecopolymer, vinyl chloride-acrylonitrile copolymer, ethylene-vinylalcohol copolymer, polyvinyl alcohol, chlorinated polyvinyl chloride,ethylene-vinyl chloride copolymer, ethylene-vinyl acetate copolymer, apolyamide resin, an ethylene-butadiene resin, a butadiene-acrylonitrileresin, a silicone resin, and a fluorine-contained resin.

The present invention is a thin-film transistor sheet comprising a gatebusline, a drain busline, and a thin-film transistor comprising asubstrate and provided thereon, a gate electrode, a gate insulatinglayer, a semiconductor layer, a source electrode and a drain electrode,the plural thin-film transistors being connected with each other throughthe gate busline and the source busline, and a manufacturing methodthereof comprising the steps of forming the semiconductor layer on thesubstrate, forming an insulating area, which is electrodematerial-repellent, on the substrate or on the semiconductor layer, andproviding an electrode material on the insulating area side to form asource electrode on one end of the insulating area and a drain electrodeon the other end of the insulating area. The insulating area is formedproviding an electrode material-repellent material on the substrate oron the semiconductor layer.

In this method of the invention, the semiconductor layer preferablycrosses the gate busline. Herein, “the semiconductor layer crosses thegate busline” also implies that the semiconductor layer contacts thegate busline.

This method will be explained below employing FIGS. 9( a), 9(b), and9(c).

FIGS. 9( a), 9(b), and 9(c) each show a structure example of an organicthin-film transistor constituting one pixel in the thin-film transistorsheet in the invention.

In FIG. 9( a), an organic semiconductor layer 3 is provided so as tocross a gate busline 11 (where the gate busline 11 is shown in dottedline, as it is covered with a gate insulating layer not illustrated), aninsulating area (an electrode material-repellent area) 6 is provided onthe organic semiconductor layer 3, and a drain electrode 4 is providedon one side of the insulating area 6, and a source layer 5 on the otherside of the insulating area 6. Herein, the gate busline serves also as agate electrode. Numerical number 12 shows a source busline.

In FIG. 9( b), a gate electrode is branched from the gate busline 11,the organic semiconductor layer 3 is provided on the branched gateelectrode, and a source electrode 5 and a drain electrode are providedso as to contact the organic semiconductor layer. A pixel electrode 4 ais formed on the drain electrode 4. Herein, the pixel electrode 4 a mayserve also as a drain electrode 4. Numerical number 12 shows a sourcebusline.

FIG. 9( c) is a schematic view showing a source electrode, a drainelectrode and a pixel electrode which are formed from two dots suppliedas ink droplets according to an ink jet method. After the insulatingarea 6 and a source busline 12 were formed, an electrode material wassupplied as droplets on the organic semiconductor layer 3 and theinsulating area 6 provided thereon, and separated on the insulating area6 to form a source electrode and a drain electrode. Accordingly, onedroplet of the electrode material forms a source electrode and a drainelectrode, and the source electrode is connected to the source busline.The pixel electrode is also from one droplet, and is connected to thedrain electrode. Herein, the pixel electrode 4 a is separated from thesource electrode 5 or the source busline 12 by the insulating area 6 toprevent electrical short. The volume of droplets of the electrodematerial is controlled according to an intended size of the electrode tobe formed. For example, if a larger pixel electrode is desired, a highervolume of the electrode material droplet is ejected onto the intendedposition by an ink jet method. According to the method of the inventionas described above, the electrodes can be easily formed.

<<Electrode Material-Repellent Area (Insulating Area)>>

In this method, the insulating layer is the same as described above inthe thin-film transistor, and is formed in the same manner as in thethin-film transistor described above.

<<Electrode Material, Electrode Material for Source Electrode and DrainElectrode>>

In this method, the source electrode and the drain electrode are thesame as described above in the thin-film transistor, and are formed inthe same manner as in the thin-film transistor described above.

Further, the gate electrode, the semiconductor layer, and the gateinsulating layer are the same as described above in the thin-filmtransistor, and they are formed in the same manner as in the thin-filmtransistor described above. The substrate is the same as described abovein the thin-film transistor.

Next, one embodiment of the method of the invention, employing an inkjet method, will be explained with reference with FIG. 10. In FIG. 10,formation of insulating area 6, source electrode 5, drain electrode 4,and source busline 12 will be explained.

A channel comprised of a semiconductor layer 3 is provided so as tocross the gate busline 11, which serves also as a gate electrode, andthe insulating area (electrode material-repellent area) 6 is formed onthe channel. After, that, ink droplet comprised of a solution ordispersion containing the electrode material is supplied to both ends ofthe insulating area 6 or is supplied onto the insulating area toseparate into two, whereby the source electrode 5, the drain electrode4, and the pixel electrode are formed.

The source busline 12 is also formed by an ink jet method. It ispreferred that the source busline 12 is formed prior to the formation ofthe source electrode, which prevents undesirable enlargement of thesource electrode material droplets.

The method of manufacturing a thin-film transistor sheet comprisesforming the insulating area and then providing an electrode material onthe entire surface of the sheet substrate to form an electrode, whichprovides a method of easily manufacturing a thin-film transistor sheetwith extremely high productivity.

As a method of supplying an electrode material over the entire surfaceof a sheet substrate, an ink jet method is preferably used in which inkjet printing is carried out. It is preferred that the ink jet printingis carried out while the substrate is transported. It is more preferredthat an insulating area is linearly formed while the substrate istransported in the direction crossing the gate busline, and then asource electrode, a drain electrode and/or a source busline are formedby supplying an electrode material. It is also preferred that the drainelectrode and the pixel electrode are simultaneously formed.

Embodiments, in which an insulating area is linearly formed in thethin-film transistor sheet, will be explained below employing FIGS. 11to 14.

FIG. 11 shows a schematic view of one embodiment in which an insulatingarea is linearly formed in the thin-film transistor sheet.

In FIG. 11, the organic semiconductor layer 3 is formed to cross thegate busline 11. For example, the semiconductor layer is formed byejecting a solution or dispersion of an organic semiconductive materialonto the sheet substrate (not illustrated) according to an ink jetmethod. Subsequently, while the substrate is transported in thedirection crossing the gate busline 11, the insulating area 6 islinearly formed.

A preferred method of linearly forming the insulating area 6 is an inkjet method or a printing method.

The line of the insulating area 6 provides a channel. Lines A and B areformed on the sheet substrate at the same time as the insulating arealine, whereby areas 20 and 21 are formed. Lines A and B are notessential. The lines A and B may be formed from the electrodes as shown,for example, in FIG. 9( c) or FIG. 10.

In FIG. 11, the electrode material is supplied to area 20 to form asource electrode or a source busline, and to area 21 to form a drainelectrode or a pixel electrode. A storage capacitance is formed betweenthe area 21 and the adjacent gate busline.

FIG. 11 shows a structure in which the gate busline serves also as agate electrode. The structure provides a TFT sheet which does notproduce problem even if the semiconductor layer, insulating area 6, andareas A and B are a little shifted to the gate busline direction.

A material for a source electrode and a material for a source buslinemay be the same or different. When a material for a source electrode anda material for a source busline is different, the material for a sourceelectrode is supplied onto a sheet substrate and then the material for asource busline is supplied onto the sheet substrate, or the material fora source busline is supplied onto a sheet substrate and then thematerial for a source electrode is supplied onto the sheet substrate, orthe material for a source busline and the material for a sourceelectrode are simultaneously supplied onto a sheet substrate.

FIG. 12 shows a schematic view of another embodiment in which aninsulating area is linearly formed in the thin-film transistor sheet.

FIG. 12 shows the same structure as FIG. 11, except that the channel ofan organic semiconductor layer 3 is formed over the line of theinsulating area 6. The organic semiconductor layer 3 and the insulatingarea 6 can be easily formed employing, for example, a continuous ink jetprinter, and preferably an ink jet printer with a fixed multi nozzlehead in which an interval between the nozzles is constant.

FIG. 13 shows a schematic view of further another embodiment in which aninsulating area is linearly formed in the thin-film transistor sheet.

FIG. 13 shows the same structure as FIG. 11, except that the gateelectrode is separated from the gate busline 11, and the organicsemiconductor layer 3 is formed in the protrusions of the gateelectrode.

FIG. 14 shows a schematic view of still further another embodiment inwhich an insulating area is linearly formed in the thin-film transistorsheet.

FIG. 14 shows the same structure as FIG. 13, except that a capacitorline is provided to face the gate bus line 11.

In FIGS. 11 through 14, as a material for the source electrode, thedrain electrode, the source busline, and the gate busline, the electrodematerials described above are used, and a conductive paste (or ink)containing a conductive polymer or metal particles such as an aqueousdispersion (BAYTRON P produced by Bayer Co., Ltd.) of polystyrenesulfonic acid and poly(ethylenedioxythiophene), a silver paste, or anaqueous dispersion containing metal particles disclosed in JapanesePatent O.P.I. Publication No. 11-80647 is preferably used.

The present invention is a method of manufacturing an electric circuitcomprising a substrate, and provided thereon, an electrode, the methodcomprising the steps of forming an insulating area, which is electrodematerial-repellent, on the substrate, and providing an electrodematerial on the insulating area side to form an electrode at potions onthe substrate other than the insulating area. In this method, theelectrode are the same as the source or drain electrode described abovein the thin-film transistor, and are formed in the same manner as in thesource or drain electrode of the thin-film transistor described above.

Further, the electrode and the insulating layer are the same asdescribed above in the thin-film transistor, and they are formed in thesame manner as in the thin-film transistor described above. Thesubstrate is also the same as described above in the thin-filmtransistor.

The insulating area is preferably comprised of a silicone rubber layer.The thickness of the insulating area in the electrical circuit ispreferably from 0.05 to 100 μm, and more preferably from 0.5 to 20 μm.

The forming of the insulating area or the electrode is preferablycarried out by an ink jet method. The providing of the electrodematerial is preferably carried out by an ink jet method. The formationof the insulating area is preferably carried out by providing a lightsensitive layer on the substrate, providing an electrodematerial-repellent insulating layer on the light sensitive layer,exposing the resulting material and developing the exposed material. Thelight sensitive layer is preferably an ablation layer, which isdescribed above.

EXAMPLES

Next, the present invention will be explained employing examples, but isnot limited thereto.

Example 1

<<Preparation of Thin-Film Transistor Sample 1>> Bottom Gate Type

A thin-film transistor sample 1, having a layer structure as shown inFIG. 1( a), was prepared according to the following procedures.

In the procedures, procedures 1 through 3 will be explained employingFIG. 3(1) through 3(6). FIG. 1( a) has the same structure as FIG. 3(6).

Procedure 1: FIG. 3(1)

Gate electrode 2, gate insulating layer 2 a, and organic semiconductorlayer 3 were provided on a substrate 1 as follows to obtain a layerstructure as shown in FIG. 3(1).

<Preparation of Substrate>

The surface of substrate 1 of a 200 μm thick PES film was coronadischarged at 50 W/m²/min and then coated with a coating liquid havingthe following composition to obtain a layer of a dry thickness of 2 μm.The resulting layer was dried at 50° C. for 5 minutes, and hardened bybeing exposed for 4 seconds employing a 60 W/cm high pressure mercurylamp 10 cm distant from the layer.

Dipentaerythritol hexacrylate monomer 60 g Dipentaerythritol hexacrylatedimmer 20 g Dipentaerythritol hexacrylate trimer 20 g or polymer higherthan the trimer Diethoxybenzophenone  2 g (UV-initiator)Silicon-containing surfactant  1 g Methyl ethyl ketone 75 g Methylpropylene glycol 75 g

The resulting hardened layer was subjected to continuous atmosphericpressure plasma treatment under the following condition to give a 50 nmthick silicon oxide layer (a subbing layer not illustrated) on thehardened layer.

(Gas used) Inert gas: Helium 98.25% by volume Reactive gas 1: an oxygengas 1.5% by volume Reactive gas 2: tetraethoxysilane vapor 0.25% byvolume (bubbled with a helium gas) (Condition of discharge) Dischargeoutput power: 10 W/cm²(Condition of Electrodes)

Electrodes used were prepared as follows:

A stainless steel jacket roll base material having a cooling device (notillustrated in FIG. 2) employing chilled water was coated with analumina thermal spray layer. After that, a solution prepared by dilutingtetramethoxysilane with ethyl acetate was coated on the resultingelectrode, dried, hardened by UV ray irradiation to carry out sealingtreatment, and smoothed to give an dielectric layer (dielectricconstant: 10) with an Rmax (defined according to JIS B 0601) of 5 μm onthe surface of the material. Thus, a roll electrode was obtained.Further, a hollow prismatic stainless steel pipe was processed in thesame manner as above to obtain a hollow prismatic electrode as a voltageapplication electrode. The roll electrode was grounded.

(Formation of Gate Electrode)

A light sensitive resin layer 1 having the following composition wascoated on the subbing layer above, and dried at 100° C. for 1 minute toform a light sensitive resin layer with a thickness of 2 μm.

(Light sensitive resin layer 1) Dye A 7 parts Novolak resin 90 parts(Condensation product of phenol, m-, p-mixed cresol, and formaldehyde,Mw = 4,000, phenol: m-cresol: p-cresol = 5:57:38 by mole) Crystal violet3 parts Propylene glycol monomethyl ether 1000 parts Dye A

The light sensitive resin layer was exposed at an energy density of 200mJ/cm² employing a 100 mW semiconductor laser emitting 830 nm light togive a gate electrode pattern, and developed with an alkali developingsolution to form a resist.

A 300 nm thick aluminum layer was formed on the entire surface of thedeveloped material according to a sputtering method, and the resist wasremoved with MEK to obtain a gate electrode 2.

(Formation of Anodization Film)

The resulting material was sufficiently washed, and anodized in anaqueous 50 g/liter ammonium borate solution by supplying direct currentfor 5 minutes through a 100V constant voltage power source to give ananodization film (not illustrated) with a thickness of 120 nm. Theresulting layer was sufficiently washed with ultra pure water.

(Formation of Gate Insulating Layer)

The resulting layer was subjected to atmospheric pressure plasmadischarge treatment at 200° C. to obtain a 30 μm thick titanium oxidelayer (a gate insulating layer 2 a) in the same manner as above, exceptthat the following gas was used.

(Gas used) Inert gas: Helium 98.25% by volume Reactive gas 1: an oxyengas  1.5% by volume Reactive gas 2: tetraethoxysilane vapor  0.25% byvolume (bubbled with helium gas)(Formation of Organic Semiconductor Layer)

A chloroform solution of Compound C described later was ejected onto aportion of the gate insulating layer 2 a where channel was to be formed,employing a piezo type ink jet printer, dried at 50° C. for 3 minutes,and heated at 200° C. for 10 minutes to obtain an organic semiconductorlayer 3 of a 50 nm thick pentacene film.

Procedure 2: FIGS. 3(2) and 3(3), Formation of Insulating Area

As shown in FIGS. 3(2) and 3(3), an electrode material-repellentmaterial, a silicone adhesive SE9185 (produced by Toray Dow Corningsilicone Co., Ltd.) was provided as ink droplet 6 a on the organicsemiconductor layer 3 provided on the substrate 1 according to a screenprinting method, and hardened at 50° C. to obtain insulating area 6comprised of a silicone rubber layer with a thickness of 3 μm and awidth of 20 μm, a first area 3-1, a second area 3-2 and a third area 3-3being formed on the organic semiconductor layer 3 provided on thesubstrate 1, wherein the electrode material-repellent material isprovided on the first area 3-1 and not on the second area 3-2 and on thethird area 3-3.

Procedure 3: FIGS. 3(4) through 3(6), Formation of Source Electrode andDrain Electrode

An aqueous dispersion (BAYTRON P produced by Bayer Co., Ltd.) ofpolystyrene sulfonic acid and poly(ethylenedioxythiophene), which was anelectrode material, was ejected on the insulating area 6 as ink droplet8 according to an ink jet method, as shown in FIG. 3(4), separated intodroplets 8 a and 8 b so that the separated droplets were provided onboth sides (second area 3-2 and third area 3-3) of the insulating area6, as shown in FIG. 3(5), and then dried at 60° C. to form a sourceelectrode 5 on the second area 3-2 and a drain electrode 4 on the thirdarea 3-3, as shown in FIG. 3(6).

FIG. 5( a) is an illustration of FIG. 3(4) viewed from the organicsemiconductor layer side in the direction perpendicular to the substrate1, and FIG. 5( b) an illustration of FIG. 3(5) viewed from the organicsemiconductor layer side in the direction perpendicular to the substrate1.

As shown in FIG. 5( a), the electrode material, immediately afterejected, existed, as ink droplets 8, on both organic semiconductor layer3 and insulating area 6 provided on the first area 3-1. However, as timeelapsed, the ejected electrode material was separated into ink droplets8 a and ink droplets 8 b by the insulating area 6 as shown in FIG. 5(b). Finally, as shown in FIGS. 3(5) and 3(6), ink droplets 8 a and 8 bform a source electrode 5 on the second area 3-2 and a drain electrode 4on the third area 3-3, respectively.

Further, adjusting ink jet nozzles of an ink jet printer, ink dropletscan be separated into ink droplets 8 a and 8 b to be ejected on bothsides of the insulating area 6, as shown in FIG. 6( a), and can form asource electrode 5 and a drain electrode 4, respectively, as shown inFIG. 6( b).

Thus, thin-film transistor sample 1 was prepared.

The thin-film transistor sample 1 exhibited good working property as ap-channel enhancement type FET, and had a carrier mobility at saturatedregion of 0.2. The ON/OFF ratio (a ratio of drain currents when asource-drain bias Vd was −50 V and a gate bias Vg was −30V and when asource•drain bias Vd was −50 V and a gate bias Vg was 0V) was 500,000.

Example 2

Thin-film transistor sample 2 was prepared in the same manner as inthin-film transistor sample 1 of Example 1, except that the insulatingarea 6 was formed employing a composition, which was obtained kneading amixture of the silicone adhesive and carbon (content ratio 2:1 byweight), instead of the silicone adhesive. The thin-film transistorsample 2 was evaluated in the same manner as in Example 1.

The thin-film transistor sample 2 exhibited the same good workingproperty as thin-film transistor sample 1. A white light transmittanceof the insulating layer of this sample 2 was 0.1%, and when the samplewas operated under a fluorescent lamp of 3000 Lux, its property did notvary.

Example 3

Thin-film transistor sample 3 was prepared in the same manner as inthin-film transistor sample 1 of Example 1, except that an organicsemiconductor layer, a source electrode and a drain electrode wereformed as follows:

1. Formation of Organic Semiconductor Layer

A chloroform solution of regioregular poly(3-hexylthiophene), (producedby Ardrich Co., Ltd.), which had been purified to have a Zn and Nicontent of not more than 10 ppm, was prepared. This solution was ejectedemploying a piezo type ink jet printer, dried at room temperature andheat treated at 50° C. for 30 minutes in a nitrogen atmosphere to forman organic semiconductor layer of poly(3-hexylthiophene) with athickness of 30 nm.

2. Formation of Source Electrode and Drain Electrode

A silver paste Dotite D-550 (produced by Fujikura Kasei Co., Ltd.) wascoated on the insulating area, and dried to form a source electrode anda drain electrode.

The thin-film transistor sample 3 exhibited good working property as ap-channel enhancement type FET, and had a carrier mobility at saturatedregion of 0.03. The ON/OFF ratio (a ratio of drain currents when asource-drain bias Vd was −50 V and a gate bias Vg was −30V and when asource•drain bias Vd was −50 V and a gate bias Vg was +10V) was 270,000.

Example 4

<<Preparation of Thin-Film Transistor Sample 4>>

Thin-film transistor sample 4 was prepared as shown in FIGS. 7(1)through 7(7), in the same manner as in thin-film transistor sample 1 ofExample 1, except that an ink receptive layer was provided on theorganic semiconductor layer 3, as shown in FIG. 7(2), and an insulatingarea 6 was provided as described below, to form a source electrode 5 anda drain electrode 4 in the ink receptive layer 7 as shown in in FIG.7(7). Thus, thin-film transistor sample 4 was prepared as shown in FIG.1( b). FIG. 7(1) is the same as FIG. 3(1).

<<Formation of Insulating Area>>

A silicone rubber solution, in which the following composition 2 wasdissolved in Isopar E (isoparaffin type hydrocarbon, produced by ExxonCo. Ltd.) to give a solid content of 10.3% by weight, was ejected, asink droplets 6 a, on the organic semiconductor layer 3 according to anink jet method, as shown in FIG. 7(3) and FIG. 4, and dried to form aninsulating area 6 with a thickness of 0.4 μm comprised of siliconerubber in the ink receptive layer 7, as shown in FIG. 7(4).

(Composition 2) α, ω-Divinylpolydimethylsiloxane 100 parts  (Molecularweight 60,000)] HMS-501 (Methylhydrogensiloxane-dimethylsiloxane 7 partscopolymer having methyl groups on the chain ends, SiH number/molecularweight = 0.69 mol/g, produced by Chisso Co., Ltd.)Vinyltris(methylethylketoxyimino) silane 3 parts SRX-212 (platinumcatalyst, produced by 5 parts Toray Dow Corning Silicone Co., Ltd.)

FIG. 1( b) and FIG. 7(7) have the same structure.

Preparation of an ink receptive layer coating liquid for an inkreceptive layer 7 was as follows.

(Preparation of Ink Receptive Layer Coating Liquid)

A coating liquid for ink receptive layer 7 was prepared as follows:

A gas phase-treated silica, AEROSIL 300 (with a primary particle size of7 nm) (produced by Nippon Aerosil Co., Ltd.) of 0.6 kg were suctiondispersed in 3 kg of colloidal silica, (20% aqueous dispersion of silicaparticles with a primary particle size of 10 to 20 nm, produced byNissan Kagaku Co., Ltd.), and added with pure water to make a 7 literaqueous dispersion. The resulting aqueous dispersion were mixed with a0.7 liter aqueous solution containing 27 g of boric acid and 23 g ofborax and 1 g of anti-foaming agent (SN381 produced by San Nopco Co.,Ltd.)

The resulting mixture was dispersed in a high pressure homogenizer twiceat a pressure 2.45×10⁷ Pa to obtain a silica aqueous dispersion. To 1liter of the resulting silica aqueous dispersion was added 1 liter of anaqueous 5% polyvinyl alcohol solution at 40° C. with stirring. Thus, anink receptive layer coating liquid was obtained.

The coating liquid was ejected as ink droplets on the organicsemiconductor layer according to an ink jet method, and dried at 100 Cin a nitrogen atmosphere to form an ink receptive layer with a thicknessof 2 μm.

In FIG. 7(5), numerical number 8 is the same as that of FIG. 3(4), inFIG. 7(6), numerical numbers 6, 8 a, and 8 b are the same as those ofFIG. 3(5), respectively, and in FIG. 7(7), the numerical numbers are thesame as FIG. 1( b).

Example 5

<<Preparation of Thin-Film Transistor Sample 5>>

Thin-film transistor sample 5 was prepared in the same manner as inthin-film transistor sample 1, except that an intermediate layer 3 a asshown in FIG. 8(5) was provided between the organic semiconductor layer3 and the insulating area 6.

In the above, the intermediate layer 3 a was formed as follows:

Gate electrode 2, gate insulating layer 2 a, and organic semiconductorlayer 3 were provided on a substrate 1 in the same manner as inProcedure 1 of Example 1 to obtain a layer structure as shown in FIG.8(1).

An ultra pure water solution of PVA was coated employing a die coater onthe organic semiconductor layer, and dried to form a PVA layer with athickness of 0.5 μm as intermediate layer 3 a as shown in FIG. 8(2).Further, ink droplet 6 a was ejected as shown in FIG. 8(3), andinsulating area 6 was formed in the same manner as in Example 4,hardened, and washed with ultra pure water to remove a PVA layer atportions other than the insulating area, as shown in FIG. 8(4).

In FIG. 8(5), 8(6), 8(7) and 8(8), numerical number 1 shows a substrate,numerical number 2 a shows a gate insulating layer, numerical number 3shows a semiconductor layer, numerical number 3 a shows an intermediatelayer, numerical number 6 shows insulating area, numerical numbers 8, 8a and 8 b show ink droplets for forming drain electrode 4 and sourceelectrode 5.

The resulting sample 5 exhibited good operation property as a p-channelenhancement type FET, and provided the same characteristic values assample 1 of Example 1.

FIG. 1( c) and FIG. 8(8) have the same structure.

Example 6

<<Preparation of Thin-Film Transistor Sample 6>>

Thin-film transistor sample 6 was prepared in the same manner as inthin-film transistor sample 5, except that an aqueous solutioncontaining PVA and carbon black in the same amount was employed to forman intermediate layer with a thickness of 1 μm.

The resulting sample 6 exhibited good operation property as a p-channelenhancement type FET and provided the same characteristic values assample 1 of Example 1. Light transmittance of the insulating area 6 ofthis sample 6 was 0.25, and when the sample was operated under afluorescent lamp of 2000 Lux, its property did not vary.

Example 1-1

A thin-film transistor sheet 1 having a structure as shown in FIGS. 11through 14 was prepared as follows.

<<Preparation of Thin-Film Transistor Sheet 1>> Procedure (1)

Gate busline 11 (when the gate busline serves also as a gate electrode,the gate electrode is not illustrated) and an organic thin-filmtransistor layer 3 were provided on the substrate 1 (not illustrated) asfollows.

(Preparation of Substrate 1)

The substrate 1 with a subbing layer was prepared in the same manner asin Example 1.

(Formation of Gate Electrode)

The light sensitive resin layer 1 used in Example 1 was coated on thesubstrate 1, and dried at 100° C. for 1 minute to form a light sensitiveresin layer with a thickness of 2 μm in the same manner as in Example 1.

The light sensitive resin layer was exposed at an energy density of 200mJ/cm² employing a 100 mW semiconductor laser emitting 830 nm light togive a gate busline pattern and a gate electrode pattern, and developedwith an alkali developing solution to form a resist.

A 300 nm thick aluminum layer was formed on the entire surface of thedeveloped material according to a sputtering method, and the resist wasremoved with MEK to obtain a gate busline 11 and a gate electrode 2.

(Formation of Anodization Film)

The resulting material was sufficiently washed, and anodized in anaqueous 50 g/liter ammonium borate solution by supplying direct currentfor 5 minutes through a 100V constant voltage power source to give ananodization film (not illustrated). The resulting layer was sufficientlywashed with ultra pure water.

(Formation of Gate Insulating Layer)

The resulting layer was subjected to atmospheric pressure plasmadischarge treatment at 200° C. to obtain a 30 nm thick titanium oxidelayer (a gate insulating layer not illustrated) in the same manner as inExample 1.

(Formation of Organic Semiconductor Layer)

A chloroform solution of Compound C used in Example 1 was ejected onto aportion of the gate insulating layer (not illustrated) where channel wasto be formed, employing a piezo type ink jet printer, dried at 50° C.for 3 minutes, and heated at 200° C. for 10 minutes to obtain an organicsemiconductor layer 3 of a 50 nm thick pentacene film.

Procedure (2): Formation of Insulating Areas 6, A and B

A silicone adhesive SE9185 (produced by Toray Dow Corning silicone Co.,Ltd.) was provided on the organic semiconductor layer 3 according to ascreen printing method, and hardened at 50° C. to obtain insulatingareas 6, A, and B, each being comprised of a silicone rubber layer witha thickness of 3 μm and a width of 20 μm.

Procedure 3: Formation of Source Electrode, Drain Electrode, PixelElectrode and Source Busline

An aqueous dispersion (BAYTRON P produced by Bayer Co., Ltd.) ofpolystyrene sulfonic acid and poly(ethylenedioxy-thiophene) was addedwith 0.01% by weight of nonionic surfactant (NP15, produced by NikkoChemicals Co., Ltd.) to obtain an electrode material, and the resultingelectrode material was coated on the insulating areas 6, line A and lineB, separated by the insulating areas, and then dried at 60° C. to form alayer of the electrode material with a thickness of 2 μm. Further, asilver paste was coated on the resulting material, separated by theinsulating areas, dried at 60° C., and then heat treated at 200° C. toform a silver paste layer with a thickness of 2 μm. Thus, sourceelectrode 20, drain electrode 21, pixel electrode 21 and source busline20 are formed.

The thin-film transistor sheet 1 prepared according to the aboveprocedures exhibited a good operation property.

Example 1-2

<<Preparation of Thin-Film Transistor Sheet 2>>

Thin-film transistor sheet 2 was prepared in the same manner as inthin-film transistor sheet 1 of Example 1-1, except that formation ofthe organic semiconductor layer was carried out as follows:

(Formation of Organic Semiconductor Layer)

A chloroform solution of regioregular poly(3-hexylthiophene), (producedby Ardrich Co., Ltd.), which had been purified to have a Zn and Nicontent of not more than 10 ppm, was prepared. This solution was ejectedemploying a piezo type ink jet printer, dried at room temperature andheat treated at 50° C. for 30 minutes in a nitrogen atmosphere to forman organic semiconductor layer of poly(3-hexylthiophene) with athickness of 30 nm.

Thus, the thin-film transistor sheet 2 (inventive) was obtained, andexhibited a good operation property.

Example 1-3

<<Preparation of Thin-Film Transistor Sheet 3>>

Thin-film transistor sheet 3 was prepared in the same manner as inthin-film transistor sheet 1 of Example 1-1, except that after thesemiconductor layer formation, the following procedures were carriedout.

(Formation of Intermediate (a 0.3 μm Thick PVA Layer) Layer)

An aqueous polyvinyl alcohol solution was coated on the organicsemiconductor layer 3, and dried at 100° C. in a nitrogen atmosphere toform an intermediate layer comprised of polyvinyl alcohol. Herein, theaqueous polyvinyl alcohol solution was one in which polyvinyl alcoholsufficiently purified was dissolved in water purified with ultra purewater manufacturing apparatus.

<<Formation of Insulating Areas 6, A, and B>>

A silicone rubber solution, in which the following composition 2 wasdissolved in Isopar E (isoparaffin type hydrocarbon, produced by ExxonCo. Ltd.) to give a solid content of 10.3% by weight, was ejected, asink droplets, on the resulting intermediate layer according to an inkjet method, dried and hardened to form insulating areas 6, A and B eachhaving a width of 7 μm and a thickness of 0.4 μm comprised of siliconerubber in the ink receptive layer 7, as shown in FIG. 7(4).

(Composition 2) α, ω-Divinylpolydimethylsiloxane 100 parts  (Molecularweight 60,000)] HMS-501 (Methylhydrogensiloxane-dimethylsiloxane 7 partscopolymer having methyl groups on the chain ends, SiH number/molecularweight = 0.69 mol/g, produced by Chisso Co., Ltd.)Vinyltris(methylethylketoxyimino)silane 3 parts SRX-212 (platinumcatalyst, produced by 5 parts Toray Dow Corning Silicone Co., Ltd.)

The intermediate layer on which the insulating areas were not providedwas removed with water, and sufficiently washed with ultra pure water.

Subsequently, electrode material was supplied to the resulting materialin the same manner as in Example 2-1 to obtain a two-layered electrode.Thus, the thin-film transistor sheet 3 (inventive) was obtained, andexhibited a good operation property.

Example 2-1

<Preparation of Substrate 101>

A mixture of 3.04 g (20 mmol) of tetramethoxysilane, 1.52 g of methylenechloride, and 1.52 g of ethanol was mixed with 0.72 g of an aqueous 0.5%by weight nitric acid solution for hydrolysis, and stirred at roomtemperature for one hour.

A solution in which 1.60 g of diacetylcellulose L50 (produced by DaicelCo., Ltd.) was dissolved in a mixed solvent of 5.3 g of ethanol and 60.9g of methyl acetate was added to the resulting mixture above, andstirred for one hour to obtain a dope. The resulting dope was cast on amoving gum belt through a doctor blade with a gap width of 800 μm, anddried at 120° C. for 30 minutes to obtain a substrate 1 with a thicknessof 200 μm. The substrate 1 had a Tg of 226° C., which was obtained bydynamic viscoelastic measurement.

The surface of substrate 101 was corona discharged at 50 W/m²/min andthen coated with a coating liquid having the following composition toobtain a layer of a dry thickness of 2 μm. The resulting layer was driedat 50° C. for 5 minutes, and hardened by being exposed for 4 secondsemploying a 60 W/cm high pressure mercury lamp 10 cm distant from thelayer.

Dipentaerythritol hexacrylate monomer 60 g Dipentaerythritol hexacrylatedimmer 20 g Dipentaerythritol hexacrylate trimer 20 g or polymer higherthan the trimer Diethoxybenzophenone  2 g (UV-initiator)Silicon-containing surfactant  1 g Methyl ethyl ketone 75 g Methylpropylene glycol 75 g

The resulting hardened layer was subjected to continuous atmosphericpressure plasma treatment under the following condition to give a 50 nmthick silicon oxide layer on the hardened layer. This layer was asubbing layer 102. Thus, a substrate 101 with a subbing layer 102, asshown in FIG. 15(1), was obtained

(Gas used) Inert gas: Helium 98.25% by volume Reactive gas 1: an oxygengas 1.5% by volume Reactive gas 2: tetraethoxysilane vapor 0.25% byvolume (bubbled with a helium gas) (Condition of discharge) Dischargeoutput power: 10 W/cm²(Condition of Electrodes)

Electrodes used were prepared as follows:

A stainless steel jacket roll base material having a cooling device (notillustrated in FIG. 2) employing chilled water was coated with analumina thermal spray layer. After that, a solution prepared by dilutingtetramethoxysilane with ethyl acetate was coated on the resultingelectrode, dried, hardened by UV ray irradiation to carry out sealingtreatment, and smoothed to give an dielectric layer (dielectricconstant: 10) with an Rmax of 5 μm on the surface of the material. Thus,a roll electrode was obtained. Further, a hollow prismatic stainlesssteel pipe was processed in the same manner as above to obtain a hollowprismatic electrode as a voltage application electrode. The rollelectrode was grounded.

<Formation of Insulating Area (Electrode Material-Repellent Area>

A silicone rubber solution, in which the following composition 2 wasdissolved in Isopar E (isoparaffin type hydrocarbon, produced by ExxonCo. Ltd.) to give a solid content of 10.3% by weight, was ejected, asink droplets, on the subbing layer 102 formed on the substrate 101according to an ink jet method, and dried to form an insulating area 108with a thickness of 0.4 μm comprised of silicone rubber, as shown inFIG. 15(2).

(Composition 2) α,ω-Divinylpolydimethylsiloxane 100 parts  (Molecularweight 60,000)] HMS-501 (Methylhydrogensiloxane-dimethylsiloxane 7 partscopolymer having methyl groups on the chain ends, SiH number/molecularweight = 0.69 mol/g, produced by Chisso Co., Ltd.)Vinyltris(methylethylketoxyimino)silane 3 parts SRX-212 (platinumcatalyst, produced by 5 parts Toray Dow Corning Silicone Co., Ltd.)<Formation of Electrode>

A dispersion containing silver particles with an average particle sizeof 8 nm, prepared according to a method disclosed in Japanese PatentO.P.I. Publication No. 11-80647, was coated on the resulting materialemploying a roll coater, wherein the dispersion was adhered only to theportions other than the insulating area 108 in the form of electrode,and dried at 200° C. for 15 minutes to form an electrode 120, as shownin FIG. 15(3). Thus, an electric circuit was obtained. The resultingelectric circuit exhibited a good electrode pattern.

Example 2-2

<Preparation of Substrate 101>

Substrate 101 with a subbing layer 102 was prepared in the same manneras in Example 2-1 above, as shown in FIG. 16(1).

(Formation of Light Sensitive Layer)

The following composition 1 was kneaded, then added with 5.90 parts of apolyisocyanate compound (Colonate 3041 containing 50% of an effectivecomponent, produced by Nippon Polyurethane Kogyo Co., Ltd.), and furtherstirred in a dissolver to obtain a coating solution 1.

Composition 1 Fe—Al ferromagnetic metal powder (Fe:Al = 100:4 by   100parts atom number, average major axis length: 0.14 μm) Vinyl chlorideresin (MR-100, produced  10.0 parts by Nippon Zeon Co., Ltd.) Urethaneresin (Vylon UR-8200, produced  5.0 parts by Toyobo Co., Ltd.) Phosphate(Phosphanol RE-610, produced  3.0 parts by Toho Kagaku Co., Ltd.) Methylethyl ketone 105.0 parts Toluene 105.0 parts Cyclohexanone  90.0 parts

The resulting coating solution 1 was coated on the subbing layer 102formed on the substrate 101, and dried at 100° C. for 5 minutes toobtain a light sensitive layer 107 with a thickness of 0.3 μm, as shownin FIG. 16(2).

The silicone rubber solution used in Example 1-1 was coated on the lightsensitive layer 107, and dried to form an electrode material-repellentlayer (an insulating layer) 108′ with a thickness of 0.4 μm comprised ofsilicone rubber, as shown in FIG. 16(3).

(Exposure and Development of Light Sensitive Layer)

The resulting material was exposed at an exposure energy density of 200mJ/cm² employing a semiconductor laser with an output power of 100 mWemitting a 830 nm light, whereby adhesion between the light sensitivelayer 107 and the insulating layer 108′ varied, and developed with abrush, whereby the silicone rubber layer (the insulating layer 108′) atexposed portions was removed to form an electrode pattern, as shown inFIG. 16(4).

(Formation of Electrode)

A dispersion containing silver particles with an average particle sizeof 8 nm, prepared according to a method disclosed in Japanese PatentO.P.I. Publication No. 11-80647, was coated on the resulting materialemploying a roll coater, wherein the dispersion was adhered only to theportions at which the silicone rubber layer at exposed portions wasremoved in the form of electrode, and dried at 200° C. for 15 minutes toform an electrode 120, as shown in FIG. 16(5). Thus, an electric circuitwas obtained.

The resulting electric circuit exhibited a good electrode pattern.

Example 2-3

(Preparation and Evaluation of Organic Thin-Film Transistor)

The following procedures were carried out employing the substrate 101with subbing layer 102 obtained above to obtain an organic thin-filmtransistor.

(Formation of Gate Electrode)

The light sensitive resin layer 1 used in Example 1 above was coated onthe subbing layer 102 of the substrate 102 above in the same manner asin Example 1 to obtain a light sensitive resin layer with a thickness of2 μm.

The light sensitive resin layer was exposed at an energy density of 200mJ/cm² employing a 100 mW semiconductor laser emitting 830 nm light togive a gate electrode pattern, and developed with an alkali developingsolution to form a resist.

A 300 nm thick aluminum layer was formed on the entire surface of thedeveloped material according to a sputtering method, and the resist wasremoved with MEK to obtain a gate electrode 10, as shown in FIG. 17(1).

(Formation of Anodization Film)

The resulting material was sufficiently washed, and anodized in anaqueous 30% by weight sulfuric acid solution by supplying direct currentfor 2 minutes through a 30V constant voltage power source to give ananodization film 119 with a thickness of 120 nm as shown in FIG. 17(1).The resulting film was sufficiently washed with ultra pure water, andsubjected to vapor sealing treatment in a chamber saturated with 100° C.vapor at 1 atmosphere.

(Formation of Gate Insulating Layer)

The resulting layer was subjected to atmospheric pressure plasmadischarge treatment at 200° C. to obtain a 30 μm thick titanium oxidelayer, a gate insulating layer 109 as shown in FIG. 17(2), in the samemanner as above, except that the following gas was used.

(Gas used) Inert gas: Helium 98.9% by volume  Reactive gas 1: an oxyengas 0.8% by volume Reactive gas 2: tetraethoxysilane vapor 0.3% byvolume (bubbled with argon gas at 150° C.)(Formation of Organic Semicondutor Layer)

A chloroform solution of Compound C described later was ejected onto aportion of the gate insulating layer 2 a where channel was to be formed,employing a piezo type ink jet printer, dried at 50° C. for 3 minutes,and heated at 200° C. for 10 minutes to obtain an organic semiconductorlayer 3 of a 50 nm thick pentacene film, as shown in FIG. 17(3).

<Formation of Organic Semiconductor Layer Protective Layer>

An aqueous polyvinyl alcohol solution, in which purified polyvinylalcohol was dissolved in water sufficiently purified employing a superpure water manufacturing apparatus, was coated on the organicsemiconductor layer 3, and dried at 100° C. in a nitrogen atmosphere toobtain an organic semiconductor layer protective layer 103 as shown inFIG. 17(4) of polyvinyl alcohol with a thickness of 1 μm.

(Formation of Light Sensitive Layer)

The following compositions A and B were individually kneaded, and thekneaded composition A, B, and polyisocyanante compound described abovewere mixed in a ratio by weight of 100:2.39:0.37, and further stirred ina dissolver to obtain a coating solution.

The resulting coating solution 1 was further ultrasonic dispersed,coated on the protective layer 103 employing an extrusion coater, anddried at 100° C. for 5 minutes to obtain a light sensitive layer 107with a thickness of 0.3 μm, as shown in FIG. 17(5).

Composition A Fe—Al ferromagnetic metal powder 100 parts Polyrethaneresin (Vylon UR-8200, produced 10.0 parts by Toyobo Co., Ltd.) Polyesterresin (Vylon 280, produced 5.0 parts by Toyobo Co., Ltd.) Phosphoricacid ester 3.0 parts Methyl ethyl ketone 105.0 parts Toluene 105.0 partsCyclohexanone 90.0 parts Composition B α-Alumina (High purity aluminaHIT60G, 100 parts average particles size: 0.18 μm, produced by SumitomoKagaku Co., Ltd.) Polyrethane resin (Vylon UR-8700, produced 15.0 partsby Toyobo Co., Ltd.) Phosphoric acid ester 3.0 parts Methyl ethyl ketone41.3 parts Toluene 41.3 parts Cyclohexanone 35.4 parts

The silicone rubber solution obtained above was coated on the lightsensitive layer 107, and dried to form an electrode material-repellentlayer (an insulating layer) 108′ with a thickness of 0.4 μm comprised ofsilicone rubber, as shown in FIG. 17(6).

(Exposure and Development of Light Sensitive Layer)

The resulting material was exposed at an exposure energy density of 300mJ/cm² employing a semiconductor laser with an output power of 100 mWemitting a 830 nm light, and developed with a brush, whereby thesilicone rubber layer (the insulating layer 18′) at exposed portions wasremoved to form a source and drain electrode pattern, as shown in FIG.17(7).

<Removal of Organic Semiconductor Layer Protective Layer>

The resulting material was further washed with water to remove the lightsensitive layer and polyvinyl alcohol protective layer at the exposedportions, as shown in FIG. 17(7).

(Formation of Source and Drain Electrodes)

An aqueous dispersion (BAYTRON P produced by Bayer Co., Ltd.) ofpolystyrene sulfonic acid and poly(ethylene-dioxythiophene) was coatedon the resulting material employing a roll coater, wherein thedispersion was adhered only to the portions at which the silicone rubberlayer at exposed portions was removed in the form of electrode, and thendried at 100° C. Further, a dispersion containing silver particles withan average particle size of 8 nm, prepared according to a methoddisclosed in Japanese Patent O.P.I. Publication No. 11-80647, was coatedon the resulting material employing a roll coater, wherein thedispersion was adhered only to the portions at which the silicone rubberlayer at exposed portions was removed in the form of electrode, anddried at 200° C. for 15 minutes to form a source electrode 5 and a drainelectrode 4, as shown in FIG. 17(8). The resulting electrodes werecomprised of a 20 nm layer of polystyrene sulfonic acid andpoly(ethylene-dioxythiophene) and a 300 nm Ag particle layer. Thus, anorganic thin-film transistor was obtained.

FIG. 17(8) shows the organic thin-film transistor obtained above. FIG.17(8) shows a sectional view of line A′B′ of FIG. 18.

The organic thin-film transistor obtained above exhibited a goodoperation property as a p channel enhancement type FET.

EFFECT OF THE INVENTION

The present invention provides a method of easily and efficientlymanufacturing a thin-film transistor, a thin-film transistor sheet andan electrical circuit, each having high accuracy, without employing avacuum system process, and further provides a method of stablymanufacturing a thin-film transistor a thin-film transistor sheet and anelectrical circuit which minimize fluctuation of their performance.

1. A method of manufacturing a thin-film transistor comprising asubstrate, a gate electrode, a gate insulating layer, a semiconductorlayer, a source electrode and a drain electrode, the method comprisingthe steps of: a) forming the semiconductor layer by providing asemiconductive material over the substrate; b) forming an insulatingarea, which is electrode material-repellent, by providing an electrodematerial-repellent material over the substrate; and c) forming a sourceelectrode and a drain electrode by providing an electrode material ontothe insulating area, whereby the provided electrode material separatesinto at least two parts and makes the source electrode on one end of theinsulating area and the drain electrode on the other end of theinsulating area, wherein the source electrode and the drain electrodeare in contact with the semiconductor layer.
 2. The method of claim 1,further comprising the step of forming an ink receptive layer on thesubstrate before the formation of the insulating area, wherein theinsulating area is formed in the ink receptive layer on the substrate.3. The method of claim 1, wherein the providing of the semiconductivematerial is carried out by an ink jet method.
 4. The method of claim 1,wherein formation of the insulating area is carried out by providing alight sensitive layer on the substrate, providing an electrodematerial-repellent insulating layer on the light sensitive layer,exposing the resulting material and developing the exposed material. 5.The method of claim 4, wherein the exposing is carried out employinglaser.
 6. The method of claim 4, wherein the light sensitive layer is anablation layer.
 7. The method of claim 1, wherein after thesemiconductor layer has been formed, an ink receptive layer is providedon the resulting semiconductor layer, and then the insulating area isformed in the ink receptive layer on the semiconductor layer.
 8. Themethod of claim 1, wherein after the semiconductor layer has beenformed, an intermediate layer is provided on the semiconductor layer soas to protect the resulting semiconductor layer, and then the insulatingarea is formed on the intermediate layer.
 9. The method of claim 1,wherein the thin-film transistor comprises the substrate, the gateelectrode and the gate insulating layer in this order.
 10. The method ofclaim 1, wherein the thin-film transistor comprises the substrate, thegate electrode, the gate insulating layer, the semiconductor layer andthe insulating layer in this order.
 11. A method of manufacturing athin-film transistor sheet comprising a gate busline, a source busline,and plural thin-film transistors comprising a substrate, a gateelectrode, a gate insulating layer, a semiconductor layer, a sourceelectrode and a drain electrode, the plural thin-film transistors beingconnected with each other through the gate busline and the sourcebusline, the method comprising the steps of: a) forming thesemiconductor layer by providing a semiconductive material over thesubstrate; b) forming an insulating area, which is electrodematerial-repellent, by providing an electrode material-repellentmaterial over the substrate; and c) forming a source electrode and adrain electrode, by providing an electrode material onto the insulatingarea whereby the provided electrode material separates into at least twoparts and makes the source electrode on one end of the insulating areaand the drain electrode on the other end of the insulating area, whereinthe source electrode and the drain electrode are in contact with thesemiconductor layer.
 12. The method of claim 11, wherein the insulatingarea is comprised of a silicone rubber layer.
 13. The method of claim11, wherein the thickness of the insulating area is from 0.5 to 10 μm.14. The method of claim 11, wherein the providing of the electrodematerial-repellent material is carried out by an ink jet method.
 15. Themethod of claim 11, further comprising the step of forming an inkreceptive layer on the substrate before the formation of the insulatingarea, wherein the insulating area is formed in the ink receptive layeron the substrate.
 16. The method of claim 11, wherein the providing ofthe semiconductive material is carried out by an ink jet method.
 17. Themethod of claim 11, wherein the providing of the electrode material iscarried out by an ink jet method.
 18. The method of claim 17, whereinthe electrode material is contained in a solvent or a dispersion mediumcontaining 50% by weight of water.
 19. The method of claim 11, whereinformation of the insulating area is carried out by providing a lightsensitive layer on the substrate, providing an electrodematerial-repellent insulating layer on the light sensitive layer,exposing the resulting material and developing the exposed material. 20.The method of claim 19, wherein the exposing is carried out employinglaser.
 21. The method of claim 19, wherein the light sensitive layer isan ablation layer.
 22. The method of claim 11, wherein after thesemiconductor layer has been formed, the insulating area is formed onthe resulting semiconductor layer.
 23. The method of claim 11, whereinafter the semiconductor layer has been formed, an ink receptive layer isprovided on the resulting scmiconductor layer, and then the insulatingarea is formed in the ink receptive layer on the semiconductor layer.24. The method of claim 11, wherein after the semiconductor layer hasbeen formed, an intermediate layer is provided on the semiconductorlayer so as to protect the resulting semiconductor layer, and then theinsulating area is formed on the intermediate layer.
 25. The method ofclaim 11, wherein the semiconductor layer is an organic semiconductorlayer containing an organic semiconductive material.
 26. The method ofclaim 11, wherein the substrate is a resin sheet comprised of a resin.27. The method of claim 11, wherein the scmiconductor layer is formed soas to cross the gate busline.
 28. The method of claim 11, wherein thedrain elcetrode forms a pixel electrode or the drain electrode isconnected to a pixel electrode, wherein the pixel electrode is separatedby the insulating area from the source electrode which is connected tothe source busline.
 29. The method of claim 11, wherein the substrate istransported during manufacture.
 30. The method of claim 11 wherein theinsulating area is linearly formed on the substrate while the substrateis transported in the direction crossing the gate busline to linearlyform the insulating area.
 31. The method of claim 11, wherein thethin-film transistor comprises the substrate, the gate electrode, andthe gate insulating layer in this order.
 32. The method of claim 11,wherein the thin-film transistor comprises the substrate, the gateelectrode, the sate insulating layer, the semiconductor layer, and theinsulating layer in this order.